Inventor
KANG MYUNG-KOO
KR28 patents
⚠️ This page may combine multiple inventors who share the name “KANG MYUNG-KOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
22 patentsUS10097529B2Oct 9, 2018
Semiconductor device for controlling access right to server of internet of things device and method of operating the same
SAMSUNG ELECTRONICS CO LTD12 citations83
US7294857B2Nov 13, 2007
Polysilicon thin film transistor array panel and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD11 citations83
US7223504B2May 29, 2007
Crystallization mask, crystallization method, and method of manufacturing thin film transistor including crystallized semiconductor
SAMSUNG ELECTRONICS CO LTD13 citations83
US7011911B2Mar 14, 2006
Mask for polycrystallization and method of manufacturing thin film transistor using polycrystallization mask
SAMSUNG ELECTRONICS CO LTD18 citations83
US7294538B2Nov 13, 2007
Method of polycrystallization, method of manufacturing polysilicon thin film transistor, and laser irradiation device therefor
SAMSUNG ELECTRONICS CO LTD6 citations74
US7183574B2Feb 27, 2007
Thin film transistor with gate electrode portion crossing grain growing direction and liquid crystal display comprising the same
SAMSUNG ELECTRONICS CO LTD6 citations73
US7164153B2Jan 16, 2007
Thin film transistor array panel
SAMSUNG ELECTRONICS CO LTD8 citations73
US11651069B2May 16, 2023
Method for operating an Internet-of-Things system
SAMSUNG ELECTRONICS CO LTD0 citations62
US11074335B2Jul 27, 2021
Method for operating an internet-of-things system
SAMSUNG ELECTRONICS CO LTD0 citations62
US7781765B2Aug 24, 2010
Mask for crystallizing polysilicon and a method for forming thin film transistor using the mask
SAMSUNG ELECTRONICS CO LTD4 citations62
US7691545B2Apr 6, 2010
Crystallization mask, crystallization method, and method of manufacturing thin film transistor including crystallized semiconductor
SAMSUNG ELECTRONICS CO LTD2 citations62
US7229860B2Jun 12, 2007
Method for manufacturing a thin film transistor using poly silicon
SAMSUNG ELECTRONICS CO LTD6 citations62
US7879700B2Feb 1, 2011
Crystallization apparatus and method of amorphous silicon
SAMSUNG ELECTRONICS CO LTD2 citations61
US10313217B2Jun 4, 2019
System on chip (SoC) capable of sharing resources with network device and devices having the SoC
SAMSUNG ELECTRONICS CO LTD0 citations52
US7858450B2Dec 28, 2010
Optic mask and manufacturing method of thin film transistor array panel using the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7791076B2Sep 7, 2010
Thin film transistor having a three-portion gate electrode and liquid crystal display using the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7538349B2May 26, 2009
Thin film transistor having a three-portion gate electrode and liquid crystal display using the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US7488633B2Feb 10, 2009
Method for forming polysilicon by illuminating a laser beam at the amorphous silicon substrate through a mask
SAMSUNG ELECTRONICS CO LTD0 citations51
US7405464B2Jul 29, 2008
Array substrate, method of manufacturing the same and method of crystallizing silicon
SAMSUNG ELECTRONICS CO LTD1 citations51
US7335541B2Feb 26, 2008
Method for fabricating thin film transistor using the mask for forming polysilicon including slit patterns deviated from each other
SAMSUNG ELECTRONICS CO LTD0 citations51
US6906349B2Jun 14, 2005
Polysilicon thin film transistor array panel and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD0 citations51
US7892704B2Feb 22, 2011
Mask for silicon crystallization, method for crystallizing silicon using the same and display device
SAMSUNG ELECTRONICS CO LTD0 citations41