Inventor
ORNER BRADLEY A
US20 patents
⚠️ This page may combine multiple inventors who share the name “ORNER BRADLEY A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
11 patentsUS7888745B2Feb 15, 2011
Bipolar transistor with dual shallow trench isolation and low base resistance
IBM21 citations92
US7691734B2Apr 6, 2010
Deep trench based far subcollector reachthrough
IBM8 citations84
US7892910B2Feb 22, 2011
Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration
IBM7 citations83
US6911681B1Jun 28, 2005
Method of base formation in a BiCMOS process
IBM5 citations74
US7936041B2May 3, 2011
Schottky barrier diodes for millimeter wave SiGe BICMOS applications
IBM3 citations63
US7701015B2Apr 20, 2010
Bipolar and CMOS integration with reduced contact height
IBM5 citations63
US7625792B2Dec 1, 2009
Method of base formation in a BiCMOS process
IBM4 citations63
US8987067B2Mar 24, 2015
Segmented guard ring structures with electrically insulated gap structures and design structures thereof
IBM3 citations61
US7550787B2Jun 23, 2009
Varied impurity profile region formation for varying breakdown voltage of devices
IBM4 citations60
US7821097B2Oct 26, 2010
Lateral passive device having dual annular electrodes
IBM0 citations52
US8030167B2Oct 4, 2011
Varied impurity profile region formation for varying breakdown voltage of devices
IBM0 citations50
ORNER BRADLEY A
2 patentsFEILCHENFELD NATALIE B
2 patentsUS8236662B2Aug 7, 2012
Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration
FEILCHENFELD NATALIE B3 citations60
US8525293B2Sep 3, 2013
Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration
FEILCHENFELD NATALIE B0 citations50