P

Inventor

ST ONGE STEPHEN A

US23 patents
⚠️ This page may combine multiple inventors who share the name “ST ONGE STEPHEN A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

21 patents
US6900519B2May 31, 2005

Diffused extrinsic base and method for fabrication

IBM95 citations97
US6452251B1Sep 17, 2002

Damascene metal capacitor

IBM61 citations96
US7002221B2Feb 21, 2006

Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same

IBM17 citations93
US6600199B2Jul 29, 2003

Deep trench-buried layer array and integrated device structures for noise isolation and latch up immunity

IBM51 citations92
US6476483B1Nov 5, 2002

Method and apparatus for cooling a silicon on insulator device

IBM35 citations92
US6096618AAug 1, 2000

Method of making a Schottky diode with sub-minimum guard ring

IBM26 citations92
US7253096B2Aug 7, 2007

Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same

IBM11 citations84
US6448124B1Sep 10, 2002

Method for epitaxial bipolar BiCMOS

IBM16 citations84
US6329690B1Dec 11, 2001

Method and apparatus to match semiconductor device performance

IBM16 citations83
US7709930B2May 4, 2010

Tuneable semiconductor device with discontinuous portions in the sub-collector

IBM10 citations80
US5882977AMar 16, 1999

Method of forming a self-aligned, sub-minimum isolation ring

IBM16 citations74
US6657280B1Dec 2, 2003

Redundant interconnect high current bipolar device

IBM5 citations72
US7701015B2Apr 20, 2010

Bipolar and CMOS integration with reduced contact height

IBM5 citations63
US7491614B2Feb 17, 2009

Methods for forming channel stop for deep trench isolation prior to deep trench etch

IBM2 citations63
US7479439B2Jan 20, 2009

Semiconductor-insulator-silicide capacitor

IBM5 citations63
US6869854B2Mar 22, 2005

Diffused extrinsic base and method for fabrication

IBM5 citations62
US7317240B2Jan 8, 2008

Redundant interconnect high current bipolar device and method of forming the device

IBM2 citations61
US6998699B2Feb 14, 2006

Redundant interconnect high current bipolar device and method of forming the device

IBM4 citations61
US7550787B2Jun 23, 2009

Varied impurity profile region formation for varying breakdown voltage of devices

IBM4 citations60
US7868423B2Jan 11, 2011

Optimized device isolation

IBM1 citations51
US8030167B2Oct 4, 2011

Varied impurity profile region formation for varying breakdown voltage of devices

IBM0 citations50

GROVES ROBERT A

1 patent

HERSHBERGER DOUGLAS B

1 patent