Inventor
ST ONGE STEPHEN A
US23 patents
⚠️ This page may combine multiple inventors who share the name “ST ONGE STEPHEN A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
21 patentsUS6900519B2May 31, 2005
Diffused extrinsic base and method for fabrication
IBM95 citations97
US6452251B1Sep 17, 2002
Damascene metal capacitor
IBM61 citations96
US7002221B2Feb 21, 2006
Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same
IBM17 citations93
US6600199B2Jul 29, 2003
Deep trench-buried layer array and integrated device structures for noise isolation and latch up immunity
IBM51 citations92
US6476483B1Nov 5, 2002
Method and apparatus for cooling a silicon on insulator device
IBM35 citations92
US6096618AAug 1, 2000
Method of making a Schottky diode with sub-minimum guard ring
IBM26 citations92
US7253096B2Aug 7, 2007
Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same
IBM11 citations84
US6448124B1Sep 10, 2002
Method for epitaxial bipolar BiCMOS
IBM16 citations84
US6329690B1Dec 11, 2001
Method and apparatus to match semiconductor device performance
IBM16 citations83
US7709930B2May 4, 2010
Tuneable semiconductor device with discontinuous portions in the sub-collector
IBM10 citations80
US5882977AMar 16, 1999
Method of forming a self-aligned, sub-minimum isolation ring
IBM16 citations74
US6657280B1Dec 2, 2003
Redundant interconnect high current bipolar device
IBM5 citations72
US7701015B2Apr 20, 2010
Bipolar and CMOS integration with reduced contact height
IBM5 citations63
US7491614B2Feb 17, 2009
Methods for forming channel stop for deep trench isolation prior to deep trench etch
IBM2 citations63
US7479439B2Jan 20, 2009
Semiconductor-insulator-silicide capacitor
IBM5 citations63
US6869854B2Mar 22, 2005
Diffused extrinsic base and method for fabrication
IBM5 citations62
US7317240B2Jan 8, 2008
Redundant interconnect high current bipolar device and method of forming the device
IBM2 citations61
US6998699B2Feb 14, 2006
Redundant interconnect high current bipolar device and method of forming the device
IBM4 citations61
US7550787B2Jun 23, 2009
Varied impurity profile region formation for varying breakdown voltage of devices
IBM4 citations60
US7868423B2Jan 11, 2011
Optimized device isolation
IBM1 citations51
US8030167B2Oct 4, 2011
Varied impurity profile region formation for varying breakdown voltage of devices
IBM0 citations50