P

Inventor

SCHWANTES STEFAN

DE9 patents
⚠️ This page may combine multiple inventors who share the name “SCHWANTES STEFAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ATMEL CORP

4 patents
US7402846B2Jul 22, 2008

Electrostatic discharge (ESD) protection structure and a circuit using the same

ATMEL CORP17 citations89
US7560334B2Jul 14, 2009

Method and system for incorporating high voltage devices in an EEPROM

ATMEL CORP5 citations71
US7230342B2Jun 12, 2007

Registration mark within an overlap of dopant regions

ATMEL CORP0 citations51
US7848070B2Dec 7, 2010

Electrostatic discharge (ESD) protection structure and a circuit using the same

ATMEL CORP0 citations48

ATMEL GERMANY GMBH

2 patents
US7504692B2Mar 17, 2009

High-voltage field-effect transistor

ATMEL GERMANY GMBH6 citations62
US7521756B2Apr 21, 2009

DMOS transistor with optimized periphery structure

ATMEL GERMANY GMBH4 citations61

TELEFUNKEN SEMICONDUCTORS GMBH & CO KG

1 patent
US7973333B2Jul 5, 2011

Lateral DMOS transistor and method for the production thereof

TELEFUNKEN SEMICONDUCTORS GMBH & CO KG6 citations60

MILLER GAYLE W

1 patent
US7407851B2Aug 5, 2008

DMOS device with sealed channel processing

MILLER GAYLE W4 citations54

SCHWANTES STEFAN

1 patent
US8093640B2Jan 10, 2012

Method and system for incorporating high voltage devices in an EEPROM

SCHWANTES STEFAN0 citations43