Inventor
KUO LIANG-TAI
TW15 patents
⚠️ This page may combine multiple inventors who share the name “KUO LIANG-TAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
13 patentsUS9384815B2Jul 5, 2016
Mechanisms for preventing leakage currents in memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US9620594B2Apr 11, 2017
Memory device, memory cell and memory cell layout
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations83
US11688789B2Jun 27, 2023
Semiconductor device with reduced flicker noise
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10971596B2Apr 6, 2021
Semiconductor device with reduced flicker noise
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US10529818B1Jan 7, 2020
Semiconductor device with reduced flicker noise
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11675383B2Jun 13, 2023
Voltage reference circuit and method for providing reference voltage
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US12363996B2Jul 15, 2025
Semiconductor structure and method of manufacturing semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12191374B2Jan 7, 2025
Semiconductor device with reduced flicker noise
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10163920B2Dec 25, 2018
Memory device and memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12422877B2Sep 23, 2025
Voltage reference circuit and method for providing reference voltage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12072726B2Aug 27, 2024
Voltage reference circuit and method for providing reference voltage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US9711516B2Jul 18, 2017
Non-volatile memory having a gate-layered triple well structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US10553597B2Feb 4, 2020
Memory cell including a plurality of wells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51