Inventor
YASUHARA NORIO
JP63 patents
⚠️ This page may combine multiple inventors who share the name “YASUHARA NORIO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
45 patentsUS6353252B1Mar 5, 2002
High breakdown voltage semiconductor device having trenched film connected to electrodes
TOSHIBA KK260 citations99
US6064086AMay 16, 2000
Semiconductor device having lateral IGBT
TOSHIBA KK205 citations99
US5241210AAug 31, 1993
High breakdown voltage semiconductor device
TOSHIBA KK123 citations98
US5838026ANov 17, 1998
Insulated-gate semiconductor device
TOSHIBA KK58 citations96
US5689121ANov 18, 1997
Insulated-gate semiconductor device
TOSHIBA KK61 citations96
US5585651ADec 17, 1996
Insulated-gate semiconductor device having high breakdown voltages
TOSHIBA KK56 citations96
US5448083ASep 5, 1995
Insulated-gate semiconductor device
TOSHIBA KK75 citations96
US5378920AJan 3, 1995
High breakdown voltage semiconductor device
TOSHIBA KK48 citations96
US5985708ANov 16, 1999
Method of manufacturing vertical power device
TOSHIBA KK73 citations95
US7138698B2Nov 21, 2006
Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof
TOSHIBA KK16 citations93
US5640040AJun 17, 1997
High breakdown voltage semiconductor device
TOSHIBA KK40 citations93
US5536961AJul 16, 1996
High breakdown voltage semiconductor device
TOSHIBA KK28 citations93
US5438220AAug 1, 1995
High breakdown voltage semiconductor device
TOSHIBA KK42 citations93
US5434444AJul 18, 1995
High breakdown voltage semiconductor device
TOSHIBA KK34 citations93
US5343067AAug 30, 1994
High breakdown voltage semiconductor device
TOSHIBA KK34 citations93
US5294825AMar 15, 1994
High breakdown voltage semiconductor device
TOSHIBA KK37 citations93
US7061060B2Jun 13, 2006
Offset-gate-type semiconductor device
TOSHIBA KK19 citations92
US6720618B2Apr 13, 2004
Power MOSFET device
TOSHIBA KK24 citations92
US6552389B2Apr 22, 2003
Offset-gate-type semiconductor device
TOSHIBA KK19 citations92
US7473978B2Jan 6, 2009
Semiconductor device and method of manufacturing the same
TOSHIBA KK9 citations84
US6864533B2Mar 8, 2005
MOS field effect transistor with reduced on-resistance
TOSHIBA KK20 citations84
US6163051ADec 19, 2000
High breakdown voltage semiconductor device
TOSHIBA KK18 citations84
US5592014AJan 7, 1997
High breakdown voltage semiconductor device
TOSHIBA KK19 citations84
US9159722B2Oct 13, 2015
Semiconductor device
TOSHIBA KK9 citations83
US7067876B2Jun 27, 2006
Semiconductor device
TOSHIBA KK9 citations74
US6878992B2Apr 12, 2005
Vertical-type power MOSFET with a gate formed in a trench
TOSHIBA KK8 citations74
US5751022AMay 12, 1998
Thyristor
TOSHIBA KK14 citations74
US5463231AOct 31, 1995
Method of operating thyristor with insulated gates
TOSHIBA KK13 citations74
US5428228AJun 27, 1995
Method of operating thyristor with insulated gates
TOSHIBA KK11 citations74
US10418470B2Sep 17, 2019
Semiconductor device having IGBT portion and diode portion
TOSHIBA KK4 citations73
US9761582B2Sep 12, 2017
Semiconductor device and method of manufacturing semiconductor device
TOSHIBA KK6 citations73
US9634128B2Apr 25, 2017
Semiconductor device
TOSHIBA KK4 citations72
US5894164AApr 13, 1999
High voltage semiconductor device
TOSHIBA KK12 citations70
US7906808B2Mar 15, 2011
Semiconductor device
TOSHIBA KK3 citations63
US7663186B2Feb 16, 2010
Semiconductor device
TOSHIBA KK4 citations63
US7646059B2Jan 12, 2010
Semiconductor device including field effect transistor for use as a high-speed switching device and a power device
TOSHIBA KK3 citations63
US7589389B2Sep 15, 2009
Semiconductor device and method of manufacturing the same
TOSHIBA KK4 citations63
US7579669B2Aug 25, 2009
Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof
TOSHIBA KK3 citations63
US7061048B2Jun 13, 2006
Power MOSFET device
TOSHIBA KK2 citations63
US5315134AMay 24, 1994
Thyristor with insulated gate
TOSHIBA KK4 citations63
US8362554B2Jan 29, 2013
MOSFET semiconductor device with backgate layer and reduced on-resistance
TOSHIBA KK3 citations59
US10438946B2Oct 8, 2019
Semiconductor device and electrical apparatus
TOSHIBA KK1 citations56
US10439038B2Oct 8, 2019
Semiconductor device and electrical apparatus
TOSHIBA KK1 citations56
US11798997B2Oct 24, 2023
Semiconductor device
TOSHIBA KK0 citations52
US9496352B2Nov 15, 2016
Semiconductor device
TOSHIBA KK1 citations52
MATSUDAI TOMOKO
2 patentsNAKAMURA KAZUTOSHI
1 patentOHTA TSUYOSHI
1 patentSUZUKI MIWAKO
1 patentShowing the top 50 of 63 patents by PatentIndex Score.