Inventor

MOCUTA DAN M

US19 patents

⚠️ This page may combine multiple inventors who share the name “MOCUTA DAN M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MOCUTA DAN M

IBM

MOSFET with super-steep retrograded island

High performance CMOS device structure with mid-gap metal gate

Chemical treatment to retard diffusion in a semiconductor overlayer

Method of preventing surface roughening during hydrogen prebake of SiGe substrates

High performance CMOS device structure with mid-gap metal gate

Structure and method for manufacturing MOSFET with super-steep retrograded island

Pseudomorphic Si/SiGe/Si body device with embedded SiGe source/drain

Method of forming thin SGOI wafers with high relaxation and low stacking fault defect density

Structure and method for manufacturing device with ultra thin SOI at the tip of a V-shape channel

Protecting silicon germanium sidewall with silicon for strained silicon/silicon mosfets

Protecting silicon germanium sidewall with silicon for strained silicon/silicon germanium MOSFETs

Multi-height multi-composition semiconductor fins

FinFET with constrained source-drain epitaxial region

FinFET with constrained source-drain epitaxial region

FinFET with constrained source-drain epitaxial region

Constrained epitaxial source/drain regions on semiconductor-on-insulator finFET device

Constrained epitaxial source/drain regions on semiconductor-on-insulator finFET device

CHIDAMBARRAO DURESETI

Pseudomorphic Si/SiGe/Si body device with embedded SiGe source/drain

GLOBALFOUNDRIES INC

Self-aligned laterally extended strap for a dynamic random access memory cell