Inventor
NELSON SHELBY F
US42 patents
⚠️ This page may combine multiple inventors who share the name “NELSON SHELBY F”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
EASTMAN KODAK CO
13 patentsUS7789961B2Sep 7, 2010
Delivery device comprising gas diffuser for thin film deposition
EASTMAN KODAK CO99 citations98
US7985684B1Jul 26, 2011
Actuating transistor including reduced channel length
EASTMAN KODAK CO22 citations93
US7923313B1Apr 12, 2011
Method of making transistor including reentrant profile
EASTMAN KODAK CO23 citations93
US7422777B2Sep 9, 2008
N,N′-dicycloalkyl-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
EASTMAN KODAK CO37 citations92
US7326956B2Feb 5, 2008
Fluorine-containing N,N′-diaryl perylene-based tetracarboxylic diimide compounds as N-type semiconductor materials for thin film transistors
EASTMAN KODAK CO30 citations92
US7972898B2Jul 5, 2011
Process for making doped zinc oxide
EASTMAN KODAK CO19 citations84
US7851380B2Dec 14, 2010
Process for atomic layer deposition
EASTMAN KODAK CO11 citations84
US7579619B2Aug 25, 2009
N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
EASTMAN KODAK CO13 citations84
US7198977B2Apr 3, 2007
N,N′-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
EASTMAN KODAK CO16 citations84
US7629605B2Dec 8, 2009
N-type semiconductor materials for thin film transistors
EASTMAN KODAK CO13 citations83
US7981719B2Jul 19, 2011
N,N′-di(arylalkyl)-substituted naphthalene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors
EASTMAN KODAK CO5 citations63
US8383469B2Feb 26, 2013
Producing transistor including reduced channel length
EASTMAN KODAK CO1 citations52
US7807994B2Oct 5, 2010
N-type semiconductor materials for thin film transistors
EASTMAN KODAK CO0 citations51
TUTT LEE W
11 patentsUS8946070B2Feb 3, 2015
Four terminal transistor fabrication
TUTT LEE W2 citations62
US8803203B2Aug 12, 2014
Transistor including reentrant profile
TUTT LEE W2 citations62
US8633068B2Jan 21, 2014
Vertical transistor actuation
TUTT LEE W2 citations62
US8492769B2Jul 23, 2013
Transistor including multi-layer reentrant profile
TUTT LEE W0 citations52
US8409937B2Apr 2, 2013
Producing transistor including multi-layer reentrant profile
TUTT LEE W1 citations52
US8338291B2Dec 25, 2012
Producing transistor including multiple reentrant profiles
TUTT LEE W1 citations52
US8847226B2Sep 30, 2014
Transistor including multiple reentrant profiles
TUTT LEE W0 citations41
US8847232B2Sep 30, 2014
Transistor including reduced channel length
TUTT LEE W0 citations41
US8698230B2Apr 15, 2014
Circuit including vertical transistors with a conductive stack having reentrant profile
TUTT LEE W0 citations41
US8674748B2Mar 18, 2014
Actuating transistor including multi-layer reentrant profile
TUTT LEE W0 citations41
US8304347B2Nov 6, 2012
Actuating transistor including multiple reentrant profiles
TUTT LEE W0 citations41
NELSON SHELBY F
9 patentsUS8273654B1Sep 25, 2012
Producing a vertical transistor including reentrant profile
NELSON SHELBY F20 citations92
US8653516B1Feb 18, 2014
High performance thin film transistor
NELSON SHELBY F18 citations84
US8803227B2Aug 12, 2014
Vertical transistor having reduced parasitic capacitance
NELSON SHELBY F2 citations62
US8637355B2Jan 28, 2014
Actuating transistor including single layer reentrant profile
NELSON SHELBY F2 citations62
US8865576B2Oct 21, 2014
Producing vertical transistor having reduced parasitic capacitance
NELSON SHELBY F1 citations52
US8623757B2Jan 7, 2014
Producing a vertical transistor including reentrant profile
NELSON SHELBY F0 citations52
US8740323B2Jun 3, 2014
Viscosity modulated dual feed continuous liquid ejector
NELSON SHELBY F0 citations46
US8617942B2Dec 31, 2013
Producing transistor including single layer reentrant profile
NELSON SHELBY F0 citations41
US8592909B2Nov 26, 2013
Transistor including single layer reentrant profile
NELSON SHELBY F0 citations41
ELLINGER CAROLYN R
5 patentsUS8927434B2Jan 6, 2015
Patterned thin film dielectric stack formation
ELLINGER CAROLYN R10 citations84
US8846545B2Sep 30, 2014
Method of forming patterned thin film dielectric stack
ELLINGER CAROLYN R12 citations84
US8791023B2Jul 29, 2014
Patterned thin film dielectric layer formation
ELLINGER CAROLYN R14 citations84
US8921236B1Dec 30, 2014
Patterning for selective area deposition
ELLINGER CAROLYN R3 citations62
US8937016B2Jan 20, 2015
Substrate preparation for selective area deposition
ELLINGER CAROLYN R1 citations52
XEROX CORP
3 patentsUS7495347B2Feb 24, 2009
Ion implantation with multiple concentration levels
XEROX CORP12 citations83
US6927153B2Aug 9, 2005
Ion implantation with multiple concentration levels
XEROX CORP5 citations73
US6805433B1Oct 19, 2004
Integrated side shooter inkjet architecture with round nozzles
XEROX CORP0 citations41