Inventor
NG WEI YEENG
US17 patents
⚠️ This page may combine multiple inventors who share the name “NG WEI YEENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
13 patentsUS11844220B2Dec 12, 2023
Integrated assemblies and methods of forming integrated assemblies
MICRON TECHNOLOGY INC2 citations73
US11205654B2Dec 21, 2021
Memory arrays and methods used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC2 citations68
US12256546B2Mar 18, 2025
Integrated assemblies and methods of forming integrated assemblies
MICRON TECHNOLOGY INC0 citations62
US11621273B2Apr 4, 2023
Integrated assemblies and methods of forming integrated assemblies
MICRON TECHNOLOGY INC0 citations62
US11805645B2Oct 31, 2023
Integrated assemblies having rugged material fill, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC1 citations61
US11626423B2Apr 11, 2023
Memory arrays and methods used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC0 citations61
US11075219B2Jul 27, 2021
Memory arrays and methods used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC0 citations61
US11917825B2Feb 27, 2024
Microelectronic devices including an oxide material between adjacent decks
MICRON TECHNOLOGY INC0 citations59
US11355514B2Jun 7, 2022
Microelectronic devices including an oxide material between adjacent decks, electronic systems, and related methods
MICRON TECHNOLOGY INC0 citations59
US11700729B2Jul 11, 2023
Memory arrays and methods used in forming a memory array comprising strings of memory cells
MICRON TECHNOLOGY INC0 citations58
US12347732B2Jul 1, 2025
Systems and methods for mitigating crack propagation in semiconductor die manufacturing
MICRON TECHNOLOGY INC0 citations56
US11637040B2Apr 25, 2023
Systems and methods for mitigating crack propagation in semiconductor die manufacturing
MICRON TECHNOLOGY INC0 citations56
US10580782B2Mar 3, 2020
Methods of forming an array of elevationally-extending strings of memory cells individually comprising a programmable charge-storage transistor
MICRON TECHNOLOGY INC0 citations35
INTEL CORP
2 patentsLODESTAR LICENSING GROUP LLC
2 patentsUS12063783B2Aug 13, 2024
Memory arrays and methods used in forming a memory array comprising strings of memory cells
LODESTAR LICENSING GROUP LLC0 citations61
US12310024B2May 20, 2025
Microelectronic devices including oxide material between decks thereof, and related memory devices
LODESTAR LICENSING GROUP LLC0 citations59