Inventor

GURGI EYAL

IL91 patents

⚠️ This page may combine multiple inventors who share the name “GURGI EYAL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GURGI EYAL

APPLE INC

Adaptive estimation of memory cell read thresholds

Early prediction of failure in programming a nonvolatile memory

Performance in reading memory cells affected by neighboring memory cells

Detection and localization of failures in 3D NAND flash memory

Interface calibration using configurable on-die terminations

Distortion estimation and cancellation in memory devices

Reliable readout of fuse data in an integrated circuit

Data storage in analog memory cells using a non-integer number of bits per cell

Estimation of memory cell wear level based on saturation current

Adaptive estimation of memory cell read thresholds

Correcting soft reliability measures of storage values read from memory cells

Data storage in a memory block following WL-WL short

Identifying word-line-to-substrate and word-line-to-word-line short-circuit events in a memory block

Threshold adjustment using data value balancing in analog memory device

Identifying and mitigating restricted sampling voltage ranges in analog memory cells

Classifying memory cells to multiple impairment profiles based on readout bit-flip counts

Identifying a failing group of memory cells in a multi-plane storage operation

Recovery from programming failure in non-volatile memory

Techniques for reducing power-down time in non-volatile memory devices

Estimating flash quality using selective error emphasis

Mitigation of retention drift in charge-trap non-volatile memory

Protection against word line failure in memory devices

Relaxing verification conditions in memory programming and erasure operations

Recovery from programming failure in non-volatile memory

Mitigation of data retention drift by progrmming neighboring memory cells

Read commands specifying error performance

Inter-word-line programming in arrays of analog memory cells

Orphan block management in non-volatile memory devices

SHALVI OFIR

Memory Device with adaptive capacity

Data storage with incremental redundancy

Programming orders for reducing distortion in arrays of multi-level analog memory cells

Estimation of non-linear distortion in memory devices

Distortion estimation and cancellation in memory devices

Distortion estimation and cancellation in memory devices

Memory device with adaptive capacity

Programming orders for reducing distortion based on neighboring rows

Reducing distortion using joint storage

ANOBIT TECHNOLOGIES LTD

Distortion estimation and cancellation in memory devices

Estimation of memory cell read thresholds by sampling inside programming level distribution intervals

Programming of analog memory cells using a single programming pulse per state transition

MEIR AVRAHAM

Data storage in analog memory cells using a non-integer number of bits per cell

Interference mitigation using individual word line erasure operations

Memory device with reduced sense time readout

KASORLA YOAV

Data storage in analog memory cells across word lines using a non-integer number of bits per cell

Efficient data storage in multi-plane memory devices

DAR RONEN

Read threshold setting based on soft readout statistics

GOLOV OREN

Wear level estimation in analog memory cells

PERLMUTTER URI

Estimation of memory cell read thresholds by sampling inside programming level distribution intervals

SOMMER NAFTALI

Efficient readout schemes for analog memory cell devices

BAUM BARAK

Read threshold estimation in analog memory cells using simultaneous multi-voltage sense