Inventor
HUANG CHUN-HSIEN
TW94 patents
⚠️ This page may combine multiple inventors who share the name “HUANG CHUN-HSIEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
25 patentsUS9728541B1Aug 8, 2017
Static random-access memory (SRAM) cell array and forming method thereof
UNITED MICROELECTRONICS CORP16 citations92
US9871048B1Jan 16, 2018
Memory device
UNITED MICROELECTRONICS CORP13 citations84
US9786647B1Oct 10, 2017
Semiconductor layout structure
UNITED MICROELECTRONICS CORP7 citations84
US9698047B2Jul 4, 2017
Dummy gate technology to avoid shorting circuit
UNITED MICROELECTRONICS CORP12 citations84
US9379119B1Jun 28, 2016
Static random access memory
UNITED MICROELECTRONICS CORP15 citations84
US9401366B1Jul 26, 2016
Layout pattern for 8T-SRAM and the manufacturing method thereof
UNITED MICROELECTRONICS CORP14 citations83
US9761302B1Sep 12, 2017
Static random access memory cell and manufacturing method thereof
UNITED MICROELECTRONICS CORP19 citations80
US10847521B2Nov 24, 2020
Layout pattern of a static random access memory
UNITED MICROELECTRONICS CORP4 citations73
US10068909B1Sep 4, 2018
Layout pattern of a memory device formed by static random access memory
UNITED MICROELECTRONICS CORP4 citations73
US10026726B2Jul 17, 2018
Dummy gate technology to avoid shorting circuit
UNITED MICROELECTRONICS CORP3 citations73
US9953988B2Apr 24, 2018
Method of forming static random-access memory (SRAM) cell array
UNITED MICROELECTRONICS CORP2 citations73
US9947674B2Apr 17, 2018
Static random-access memory (SRAM) cell array
UNITED MICROELECTRONICS CORP2 citations73
US11475953B1Oct 18, 2022
Semiconductor layout pattern and forming method thereof
UNITED MICROELECTRONICS CORP4 citations72
US10861549B1Dec 8, 2020
Ternary content addressable memory unit capable of reducing charge sharing effect
UNITED MICROELECTRONICS CORP3 citations72
US10706914B2Jul 7, 2020
Static random access memory
UNITED MICROELECTRONICS CORP5 citations72
US10559573B2Feb 11, 2020
Static random access memory structure
UNITED MICROELECTRONICS CORP5 citations72
US10366756B1Jul 30, 2019
Control circuit used for ternary content-addressable memory with two logic units
UNITED MICROELECTRONICS CORP2 citations72
US10153287B1Dec 11, 2018
Layout pattern for static random access memory
UNITED MICROELECTRONICS CORP6 citations72
US8748066B2Jun 10, 2014
Method for forming photomasks
UNITED MICROELECTRONICS CORP4 citations72
US9268896B1Feb 23, 2016
Method of forming a photomask
UNITED MICROELECTRONICS CORP4 citations71
US10381056B2Aug 13, 2019
Dual port static random access memory (DPSRAM) cell
UNITED MICROELECTRONICS CORP6 citations70
US12340830B2Jun 24, 2025
Spin-orbit torque magnetic random access memory circuit and layout thereof
UNITED MICROELECTRONICS CORP1 citations64
US9941288B2Apr 10, 2018
Static random-access memory (SRAM) cell array
UNITED MICROELECTRONICS CORP1 citations63
US8966410B2Feb 24, 2015
Semiconductor structure and method for fabricating semiconductor layout
UNITED MICROELECTRONICS CORP2 citations63
US11170854B2Nov 9, 2021
Layout pattern of two-port ternary content addressable memory
UNITED MICROELECTRONICS CORP0 citations62
TAIWAN SEMICONDUCTOR MFG CO LTD
20 patentsUS11101353B2Aug 24, 2021
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10418279B2Sep 17, 2019
Method of forming contact metal
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US9711402B1Jul 18, 2017
Method of forming contact metal
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11929314B2Mar 12, 2024
Interconnect structures including a fin structure and a metal cap
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11410880B2Aug 9, 2022
Phase control in contact formation
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US9793204B2Oct 17, 2017
Method of manufacturing semiconductor structure comprising plurality of through holes using metal hard mask
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US9773779B2Sep 26, 2017
Semiconductor structure with resistor layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12557623B2Feb 17, 2026
Semiconductor device with connecting structure having a doped layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12009305B2Jun 11, 2024
Semiconductor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11791204B2Oct 17, 2023
Semiconductor device with connecting structure having a doped layer and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11652053B2May 16, 2023
Semiconductor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12588268B2Mar 24, 2026
Liner-free conductive structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12211747B2Jan 28, 2025
Method of forming contact metal
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12057397B2Aug 6, 2024
Capping layer for liner-free conductive structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12046510B2Jul 23, 2024
Conductive feature formation and structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11791208B2Oct 17, 2023
Method of forming contact metal
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11594609B2Feb 28, 2023
Liner-free conductive structures
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11521929B2Dec 6, 2022
Capping layer for liner-free conductive structures
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11232985B2Jan 25, 2022
Method of forming contact metal
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11031286B2Jun 8, 2021
Conductive feature formation and structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
TAIWAN SEMICONDUCTOR MFG
2 patentsWISTRON CORP
1 patentHUANG CHUN-HSIEN
1 patentYANG YU-SHIANG
1 patentShowing the top 50 of 94 patents by PatentIndex Score.