Inventor · disambiguated record
Christopher J. Waskiewicz
Also filed as: WASKIEWICZ CHRISTOPHER · WASKIEWICZ CHRISTOPHER J · WASKIEWICZ CHRISTOPHER JOSEPH
68 granted patents·4 pending applications·712 citations·filing 1996–2023
98Inventor score
Files withIBM72
Top patents by PatentIndex Score
72 records- 0199US10229986B1Vertical transport field-effect transistor including dual layer top spacerIBM·Filed 2017·Granted Mar 12, 2019·35 cites·8 claims
- 0299US9666528B1BEOL vertical fuse formed over air gapIBM·Filed 2016·Granted May 30, 2017·430 cites·14 claims
- 0397US10319833B1Vertical transport field-effect transistor including air-gap top spacerIBM·Filed 2017·Granted Jun 11, 2019·15 cites·13 claims
- 0497US9449871B1Hybrid airgap structure with oxide linerIBM·Filed 2015·Granted Sep 20, 2016·21 cites·10 claims
- 0596US11171051B1Contacts and liners having multi-segmented protective capsIBM·Filed 2020·Granted Nov 9, 2021·9 cites·20 claims
- 0696US10483361B1Wrap-around-contact structure for top source/drain in vertical FETsIBM·Filed 2018·Granted Nov 19, 2019·11 cites·15 claims
- 0796US10361129B1Self-aligned double patterning formed fincutIBM·Filed 2018·Granted Jul 23, 2019·14 cites·18 claims
- 0896US9780027B2Hybrid airgap structure with oxide linerIBM·Filed 2016·Granted Oct 3, 2017·13 cites·18 claims
- 0995US11495538B2Fully aligned via for interconnectIBM·Filed 2020·Granted Nov 8, 2022·3 cites·14 claims
- 1092US11476346B2Vertical transistor having an oxygen-blocking top spacerIBM·Filed 2020·Granted Oct 18, 2022·2 cites·15 claims
- 1192US9978560B2System and method for performing nano beam diffraction analysisIBM·Filed 2016·Granted May 22, 2018·6 cites·25 claims
- 1292US8986921B2Lithographic material stack including a metal-compound hard maskIBM·Filed 2013·Granted Mar 24, 2015·11 cites·18 claims
- 1391US8987133B2Titanium oxynitride hard mask for lithographic patterningIBM·Filed 2013·Granted Mar 24, 2015·9 cites·9 claims
- 1490US10559671B2Vertical transport field-effect transistor including air-gap top spacerIBM·Filed 2019·Granted Feb 11, 2020·5 cites·7 claims
- 1587US11244861B2Method and structure for forming fully-aligned viaIBM·Filed 2020·Granted Feb 8, 2022·2 cites·20 claims
- 1687US11239165B2Method of forming an interconnect structure with enhanced corner connectionIBM·Filed 2020·Granted Feb 1, 2022·2 cites·5 claims
- 1787US10770653B1Selective dielectric deposition to prevent gouging in MRAMIBM·Filed 2019·Granted Sep 8, 2020·7 cites·7 claims
- 1885US10741652B2Wrap-around-contact structure for top source/drain in vertical FETsIBM·Filed 2019·Granted Aug 11, 2020·2 cites·20 claims
- 1984US9087876B2Titanium oxynitride hard mask for lithographic patterningIBM·Filed 2015·Granted Jul 21, 2015·3 cites·16 claims
- 2083US10475878B2BEOL capacitor through airgap metallizationIBM·Filed 2017·Granted Nov 12, 2019·3 cites·11 claims
- 2182US11152265B2Local isolation of source/drain for reducing parasitic capacitance in vertical field effect transistorsIBM·Filed 2019·Granted Oct 19, 2021·2 cites·20 claims
- 2275US10559672B2Vertical transport field-effect transistor including dual layer top spacerIBM·Filed 2019·Granted Feb 11, 2020·1 cites·5 claims
- 2374US10833173B2Low-resistance top contact on VTFETIBM·Filed 2018·Granted Nov 10, 2020·1 cites·8 claims
- 2473US11876124B2Vertical transistor having an oxygen-blocking layerIBM·Filed 2022·Granted Jan 16, 2024·0 cites·20 claims
- 2573US11205723B2Selective source/drain recess for improved performance, isolation, and scalingIBM·Filed 2019·Granted Dec 21, 2021·1 cites·16 claims
- 2672US10528817B2Smart display apparatus and control systemIBM·Filed 2017·Granted Jan 7, 2020·1 cites·20 claims
- 2770US6703312B2Method of forming active devices of different gatelengths using lithographic printed gate images of same lengthIBM·Filed 2002·Granted Mar 9, 2004·16 cites·20 claims
- 2869US11646358B2Sacrificial fin for contact self-alignmentIBM·Filed 2022·Granted May 9, 2023·0 cites·20 claims
- 2969US11263059B2Load levelerIBM·Filed 2018·Granted Mar 1, 2022·1 cites·18 claims
- 3069US6294449B1Self-aligned contact for closely spaced transistorsIBM·Filed 1999·Granted Sep 25, 2001·37 cites·6 claims
- 3168US5712702AMethod and apparatus for determining chamber cleaning end pointIBM·Filed 1996·Granted Jan 27, 1998·30 cites·19 claims
- 3266US11646373B2Vertical field effect transistor with bottom spacerIBM·Filed 2021·Granted May 9, 2023·0 cites·20 claims
- 3366US10892336B2Wrap-around-contact structure for top source/drain in vertical FETSIBM·Filed 2019·Granted Jan 12, 2021·0 cites·20 claims
- 3466US10825916B2Vertical transport field-effect transistor including dual layer top spacerIBM·Filed 2020·Granted Nov 3, 2020·0 cites·7 claims
- 3565US11742246B2Local isolation of source/drain for reducing parasitic capacitance in vertical field effect transistorsIBM·Filed 2021·Granted Aug 29, 2023·0 cites·20 claims
- 3664US10658154B2System and method for performing nano beam diffraction analysisIBM·Filed 2018·Granted May 19, 2020·0 cites·18 claims
- 3763US10109455B2System and method for performing nano beam diffraction analysisIBM·Filed 2018·Granted Oct 23, 2018·0 cites·20 claims
- 3862US11316029B2Sacrificial fin for contact self-alignmentIBM·Filed 2020·Granted Apr 26, 2022·0 cites·20 claims
- 3962US11113533B2Smart display apparatus and control systemIBM·Filed 2019·Granted Sep 7, 2021·0 cites·20 claims
- 4062US6303275B1Method for resist filling and planarization of high aspect ratio featuresIBM·Filed 2000·Granted Oct 16, 2001·7 cites·20 claims
- 4161US10546813B2BEOL vertical fuse formed over air gapIBM·Filed 2018·Granted Jan 28, 2020·0 cites·20 claims
- 4261US10453793B2BEOL vertical fuse formed over air gapIBM·Filed 2018·Granted Oct 22, 2019·0 cites·20 claims
- 4360US12464809B2Vertical field effect transistor with minimal contact to gate erosionIBM·Filed 2021·Granted Nov 4, 2025·0 cites·20 claims
- 4460US12249643B2Stacked planar field effect transistors with 2D material channelsIBM·Filed 2021·Granted Mar 11, 2025·0 cites·20 claims
- 4560US12009422B2Self aligned top contact for vertical transistorIBM·Filed 2021·Granted Jun 11, 2024·0 cites·20 claims
- 4660US11908923B2Low-resistance top contact on VTFETIBM·Filed 2020·Granted Feb 20, 2024·0 cites·7 claims
- 4760US11217692B2Vertical field effect transistor with bottom spacerIBM·Filed 2020·Granted Jan 4, 2022·0 cites·20 claims
- 4859US12356711B2Late gate extensionIBM·Filed 2021·Granted Jul 8, 2025·0 cites·18 claims
- 4959US11901440B2Sacrificial fin for self-aligned contact rail formationIBM·Filed 2021·Granted Feb 13, 2024·0 cites·20 claims
- 5058US11742354B2Top epitaxial layer and contact for VTFETIBM·Filed 2021·Granted Aug 29, 2023·0 cites·19 claims
Showing the top 50 of 72 patent records by PatentIndex Score.
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