Inventor
AI YUJIE
CN8 patents
Patents
8 patentsUS8564031B2Oct 22, 2013
High voltage-resistant lateral double-diffused transistor based on nanowire device
HUANG RU9 citations81
US8513067B2Aug 20, 2013
Fabrication method for surrounding gate silicon nanowire transistor with air as spacers
HUANG RU10 citations81
US8598636B2Dec 3, 2013
Heat dissipation structure of SOI field effect transistor
HUANG RU5 citations68
US8563370B2Oct 22, 2013
Method for fabricating surrounding-gate silicon nanowire transistor with air sidewalls
HUANG RU3 citations60
US8901644B2Dec 2, 2014
Field effect transistor with a vertical channel and fabrication method thereof
HUANG RU2 citations59
US8288238B2Oct 16, 2012
Method for fabricating a tunneling field-effect transistor
HUANG RU5 citations57
US9034702B2May 19, 2015
Method for fabricating silicon nanowire field effect transistor based on wet etching
HUANG RU1 citations51
US8592276B2Nov 26, 2013
Fabrication method of vertical silicon nanowire field effect transistor
HUANG RU1 citations51