Inventor

OSHIMA YUICHI

JP32 patents

⚠️ This page may combine multiple inventors who share the name “OSHIMA YUICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

OSHIMA YUICHI

HITACHI CABLE

Semiconductor substrate made of group III nitride, and process for manufacture thereof

Epitaxially grown nitride-based compound semiconductor crystal substrate structure with low dislocation density

Group III nitride semiconductor substrate and its manufacturing method

Porous substrate for epitaxial growth, method for manufacturing same, and method for manufacturing III-nitride semiconductor substrate

Group III nitride based semiconductor substrate and process for manufacture thereof

Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing method

Group III nitride semiconductor substrate

Group III-V nitride-based semiconductor substrate and method of making same

Nitride semiconductor substrate and its production method

Method of fabricating group III nitride semiconductor single crystal, and method of fabricating group III nitride semiconductor single crystal substrate

Nitride-based semiconductor substrate and method of making the same

Method of making nitride-based compound semiconductor crystal and substrate

Nitride-based semiconductor substrate, method of making the same and epitaxial substrate for nitride-based semiconductor light emitting device

Nitride-based compound semiconductor substrate and method for fabricating the same

OSHIMA YUICHI

Compound semiconductor substrate production method

Nitride-based semiconductor substrate and semiconductor device

Nitride-based semiconductor substrate and semiconductor device

Method for manufacturing a group III nitride semiconductor crystal and method for manufacturing a group III nitride semiconductor substrate

Group III nitride semiconductor substrate production method, and group III nitride semiconductor substrate

Nitride semiconductor substrate, production method therefor and nitride semiconductor device

Group III-V nitride based semiconductor substrate and method of making same

GaN single-crystal substrate and method for producing GaN single crystal

FLOSFIA INC

Crystalline multilayer structure, semiconductor device, and method of manufacturing crystalline structure

Crystalline film containing a crystalline metal oxide and method for manufacturing the same under partial pressure

Crystalline film, semiconductor device including crystalline film, and method for producing crystalline film

CEMEDINE CO LTD

Moisture curable composition

Moisture curable composition

NEC CORP

Method of forming an epitaxially grown nitride-based compound semiconductor crystal substrate structure and the same substrate structure

SUMITOMO CHEMICAL CO

Nitride semiconductor crystal producing method including growing nitride semiconductor crystal over seed crystal substrate

FUJIKURA HAJIME

Nitride semiconductor crystal producing method, nitride semiconductor epitaxial wafer, and nitride semiconductor freestanding substrate

UNIV BOSTON

Method of treating ischemic injury with follistatin-like 1 polypeptide

WALSH KENNETH

Method of treating ischemic injury with follistatin-like 1 polypeptide