P

Inventor

JENG SHWANG-MING

TW42 patents
⚠️ This page may combine multiple inventors who share the name “JENG SHWANG-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG

24 patents
US6372661B1Apr 16, 2002

Method to improve the crack resistance of CVD low-k dielectric constant material

TAIWAN SEMICONDUCTOR MFG60 citations96
US6846756B2Jan 25, 2005

Method for preventing low-k dielectric layer cracking in multi-layered dual damascene metallization layers

TAIWAN SEMICONDUCTOR MFG39 citations93
US6657284B1Dec 2, 2003

Graded dielectric layer and method for fabrication thereof

TAIWAN SEMICONDUCTOR MFG24 citations93
US7564136B2Jul 21, 2009

Integration scheme for Cu/low-k interconnects

TAIWAN SEMICONDUCTOR MFG31 citations92
US7482265B2Jan 27, 2009

UV curing of low-k porous dielectrics

TAIWAN SEMICONDUCTOR MFG22 citations92
US6821905B2Nov 23, 2004

Method for avoiding carbon and nitrogen contamination of a dielectric insulating layer

TAIWAN SEMICONDUCTOR MFG24 citations91
US6753260B1Jun 22, 2004

Composite etching stop in semiconductor process integration

TAIWAN SEMICONDUCTOR MFG29 citations91
US7723226B2May 25, 2010

Interconnects containing bilayer porous low-k dielectrics using different porogen to structure former ratio

TAIWAN SEMICONDUCTOR MFG11 citations84
US7365026B2Apr 29, 2008

CxHy sacrificial layer for cu/low-k interconnects

TAIWAN SEMICONDUCTOR MFG10 citations83
US7805692B2Sep 28, 2010

Method for local hot spot fixing

TAIWAN SEMICONDUCTOR MFG7 citations74
US7626245B2Dec 1, 2009

Extreme low-k dielectric film scheme for advanced interconnect

TAIWAN SEMICONDUCTOR MFG7 citations73
US7646097B2Jan 12, 2010

Bond pads and methods for fabricating the same

TAIWAN SEMICONDUCTOR MFG6 citations70
US7485949B2Feb 3, 2009

Semiconductor device

TAIWAN SEMICONDUCTOR MFG4 citations63
US7314828B2Jan 1, 2008

Repairing method for low-k dielectric materials

TAIWAN SEMICONDUCTOR MFG6 citations63
USRE42514EJul 5, 2011

Extreme low-K dielectric film scheme for advanced interconnects

TAIWAN SEMICONDUCTOR MFG2 citations62
US7465676B2Dec 16, 2008

Method for forming dielectric film to improve adhesion of low-k film

TAIWAN SEMICONDUCTOR MFG3 citations62
US7042049B2May 9, 2006

Composite etching stop in semiconductor process integration

TAIWAN SEMICONDUCTOR MFG2 citations61
US6869836B1Mar 22, 2005

ILD stack with improved CMP results

TAIWAN SEMICONDUCTOR MFG2 citations60
US6620745B2Sep 16, 2003

Method for forming a blocking layer

TAIWAN SEMICONDUCTOR MFG4 citations59
US9004914B2Apr 14, 2015

Method of and apparatus for active energy assist baking

TAIWAN SEMICONDUCTOR MFG0 citations52
US8877083B2Nov 4, 2014

Surface treatment in the formation of interconnect structure

TAIWAN SEMICONDUCTOR MFG0 citations52
USRE41935ENov 16, 2010

Method for preventing low-k dielectric layer cracking in multi-layered dual damascene metallization layers

TAIWAN SEMICONDUCTOR MFG0 citations52
US7405481B2Jul 29, 2008

Glue layer for adhesion improvement between conductive line and etch stop layer in an integrated circuit chip

TAIWAN SEMICONDUCTOR MFG0 citations52
US9368452B2Jun 14, 2016

Metal conductor chemical mechanical polish

TAIWAN SEMICONDUCTOR MFG0 citations51

TAIWAN SEMICONDUCTOR MFG CO LTD

6 patents

LIOU JOUNG-WEI

2 patents

KO CHUNG-CHI

2 patents

TAIWAN SEMICONDUCTOR MANFACTUR

1 patent

WANG KUAN-CHEN

1 patent

YU CHEN-HUA

1 patent

CHOU CHIA-CHENG

1 patent

KANG HUANG SOON

1 patent

JENG SHWANG-MING

1 patent

SUEN SHICH-CHANG

1 patent

KO CHUNG CHI

1 patent