Inventor
CHOI DAE SIK
KR21 patents
⚠️ This page may combine multiple inventors who share the name “CHOI DAE SIK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LG CHEMICAL LTD
9 patentsUS9755195B2Sep 5, 2017
Apparatus and method for sealing pouch case of secondary battery
LG CHEMICAL LTD4 citations69
US10804571B2Oct 13, 2020
Method of manufacturing battery cell comprising electrode having aperture
LG CHEMICAL LTD1 citations60
US11264636B2Mar 1, 2022
Pouch-shaped secondary battery comprising electrode-tab-cutting device
LG CHEMICAL LTD0 citations49
US11189881B2Nov 30, 2021
Pouch-shaped secondary battery comprising venting guidance device
LG CHEMICAL LTD0 citations49
US10050250B2Aug 14, 2018
Anode for lithium secondary battery and lithium ion secondary battery including the same
LG CHEMICAL LTD0 citations49
US9837688B2Dec 5, 2017
Battery temperature adjusting system and operating method thereof
LG CHEMICAL LTD0 citations47
US8624553B2Jan 7, 2014
Battery temperature adjusting system and operating method thereof
LG CHEMICAL LTD0 citations47
US10720628B2Jul 21, 2020
Battery module including cooling pin having fixing protrusions formed thereon
LG CHEMICAL LTD0 citations41
US9397373B2Jul 19, 2016
Lithium ion secondary battery without internal short
LG CHEMICAL LTD0 citations36
SAMSUNG ELECTRONICS CO LTD
5 patentsUS7425493B2Sep 16, 2008
Methods of forming dielectric structures and capacitors
SAMSUNG ELECTRONICS CO LTD8 citations71
US7279392B2Oct 9, 2007
Thin film structure, capacitor, and methods for forming the same
SAMSUNG ELECTRONICS CO LTD6 citations63
US7888727B2Feb 15, 2011
Semiconductor device and gate structure having a composite dielectric layer and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7566608B2Jul 28, 2009
Methods of forming thin layers including zirconium hafnium oxide and methods of forming gate structures, capacitors, and flash memory devices using the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7560349B2Jul 14, 2009
Semiconductor device and gate structure having a composite dielectric layer and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations52