Inventor
OISHI TOSHIYUKI
JP26 patents
⚠️ This page may combine multiple inventors who share the name “OISHI TOSHIYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
22 patentsUS6566734B2May 20, 2003
Semiconductor device
MITSUBISHI ELECTRIC CORP102 citations98
US5622567AApr 22, 1997
Thin film forming apparatus using laser
MITSUBISHI ELECTRIC CORP147 citations98
US6245641B1Jun 12, 2001
Semiconductor device comprising trench isolation insulator film and method of fabricating the same
MITSUBISHI ELECTRIC CORP68 citations96
US6110291AAug 29, 2000
Thin film forming apparatus using laser
MITSUBISHI ELECTRIC CORP67 citations94
US6633070B2Oct 14, 2003
Semiconductor device
MITSUBISHI ELECTRIC CORP44 citations92
US6617654B2Sep 9, 2003
Semiconductor device with sidewall spacers and elevated source/drain region
MITSUBISHI ELECTRIC CORP28 citations92
US6518635B1Feb 11, 2003
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP22 citations92
US6344388B1Feb 5, 2002
Method of manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP24 citations92
US6335252B1Jan 1, 2002
Semiconductor device manufacturing method
MITSUBISHI ELECTRIC CORP31 citations92
US6081662AJun 27, 2000
Semiconductor device including trench isolation structure and a method of manufacturing thereof
MITSUBISHI ELECTRIC CORP44 citations92
US5020072AMay 28, 1991
Semiconductor laser device
MITSUBISHI ELECTRIC CORP32 citations92
US6635938B1Oct 21, 2003
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP19 citations83
US8035130B2Oct 11, 2011
Nitride semiconductor heterojunction field effect transistor having wide band gap barrier layer that includes high concentration impurity region
MITSUBISHI ELECTRIC CORP16 citations82
US6624034B2Sep 23, 2003
Method of making field effect transistor in which the increase of parasitic capacitance is restrained by scale reduction
MITSUBISHI ELECTRIC CORP8 citations74
US6600195B1Jul 29, 2003
Semiconductor device
MITSUBISHI ELECTRIC CORP11 citations74
US6506651B2Jan 14, 2003
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP2 citations63
US7939943B2May 10, 2011
Nitride semiconductor device including an electrode in ohmic contact with a P-type nitride semiconductor contact layer
MITSUBISHI ELECTRIC CORP1 citations52
US7842962B2Nov 30, 2010
Nitride semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP0 citations52
US7791097B2Sep 7, 2010
Nitride semiconductor device and manufacturing method of the same
MITSUBISHI ELECTRIC CORP0 citations52
US7714439B2May 11, 2010
Nitride semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP0 citations52
US7378351B2May 27, 2008
Method of manufacturing nitride semiconductor device
MITSUBISHI ELECTRIC CORP0 citations52
US7678597B2Mar 16, 2010
Method of manufacturing semiconductor device including gallium-nitride semiconductor structure and a palladium contact
MITSUBISHI ELECTRIC CORP0 citations39