P

Inventor

HASEGAWA YOSHIAKI

JP65 patents
⚠️ This page may combine multiple inventors who share the name “HASEGAWA YOSHIAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

25 patents
US6720586B1Apr 13, 2004

Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD98 citations98
US6614059B1Sep 2, 2003

Semiconductor light-emitting device with quantum well

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD91 citations98
US6030849AFeb 29, 2000

Methods of manufacturing semiconductor, semiconductor device and semiconductor substrate

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD66 citations96
US6911351B2Jun 28, 2005

Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD22 citations93
US6806109B2Oct 19, 2004

Method of fabricating nitride based semiconductor substrate and method of fabricating nitride based semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD22 citations93
US6611005B2Aug 26, 2003

Method for producing semiconductor and semiconductor laser device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD17 citations93
US6586774B2Jul 1, 2003

Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD21 citations92
US6466597B1Oct 15, 2002

Semiconductor laser device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD27 citations92
US7160748B2Jan 9, 2007

Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations84
US7005680B2Feb 28, 2006

Semiconductor light-emitting device including a divided electrode having a plurality of spaced apart conductive members

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations84
US6709881B2Mar 23, 2004

Method for manufacturing semiconductor and method for manufacturing semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations84
US6884648B2Apr 26, 2005

Method for fabricating semiconductor light emitting device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations83
US7221690B2May 22, 2007

Semiconductor laser and process for manufacturing the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations74
US6977186B2Dec 20, 2005

Method for manufacturing semiconductor laser optical device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD5 citations74
US6940100B2Sep 6, 2005

Group III-V nitride semiconductor light-emitting device which allows for efficient injection of electrons into an active layer

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations74
US6653662B2Nov 25, 2003

Semiconductor light-emitting device, method for fabricating the same, and method for driving the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations74
US6562129B2May 13, 2003

Formation method for semiconductor layer

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations74
US6324200B1Nov 27, 2001

Semiconductor laser device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations74
US6265287B1Jul 24, 2001

Method for producing semiconductor layer for a semiconductor laser device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations74
US6072762AJun 6, 2000

Optical disk recording/reproducing method and apparatus for preventing wave length shift during recording and reproducing operations

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations74
US6958493B2Oct 25, 2005

Method for fabricating semiconductor light emitting device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations73
US7396697B2Jul 8, 2008

Semiconductor light-emitting device and method for manufacturing the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations63
US7108745B2Sep 19, 2006

Formation method for semiconductor layer

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63
US7056756B2Jun 6, 2006

Nitride semiconductor laser device and fabricating method thereof

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations63
US6921678B2Jul 26, 2005

Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63

PANASONIC CORP

7 patents

HITACHI LTD

4 patents

TOSHIBA KK

3 patents

HITACHI COMM TECH LTD

2 patents

HASEGAWA YOSHIAKI

2 patents

MURATA MANUFACTURING CO

2 patents

IINO YUTAKA

1 patent

SATO MAKOTO

1 patent

RENESAS ELECTRONICS CORP

1 patent

ANZUE NAOMI

1 patent

MINEMOTO HISASHI

1 patent

Showing the top 50 of 65 patents by PatentIndex Score.