P

Inventor

LEE WOO-SUNG

KR49 patents
⚠️ This page may combine multiple inventors who share the name “LEE WOO-SUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

22 patents
US9716104B2Jul 25, 2017

Vertical memory devices having dummy channel regions

SAMSUNG ELECTRONICS CO LTD39 citations97
US9615312B2Apr 4, 2017

Method for connection between electronic devices and electronic device thereof

SAMSUNG ELECTRONICS CO LTD6 citations84
US10153292B2Dec 11, 2018

Vertical memory devices having dummy channel regions

SAMSUNG ELECTRONICS CO LTD12 citations83
US7482242B2Jan 27, 2009

Capacitor, method of forming the same, semiconductor device having the capacitor and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD8 citations83
US10094887B2Oct 9, 2018

Auxiliary power supply test methods and electronic apparatus using the same

SAMSUNG ELECTRONICS CO LTD7 citations81
US7091074B2Aug 15, 2006

Method of forming a gate oxide layer in a semiconductor device and method of forming a gate electrode having the same

SAMSUNG ELECTRONICS CO LTD9 citations74
US10705155B2Jul 7, 2020

Memory systems and power management apparatuses including secondary power devices, and related methods of operation

SAMSUNG ELECTRONICS CO LTD4 citations72
US9972636B2May 15, 2018

Vertical memory devices having dummy channel regions

SAMSUNG ELECTRONICS CO LTD4 citations72
US10263339B2Apr 16, 2019

X-ray detector and X-ray imaging apparatus having the same

SAMSUNG ELECTRONICS CO LTD2 citations71
US6706613B2Mar 16, 2004

Methods for manufacturing stacked gates including oxide/nitride/oxide (ONO) interlayer dielectrics using pre-annealing and/or post-annealing in nitrogen

SAMSUNG ELECTRONICS CO LTD12 citations71
US9696771B2Jul 4, 2017

Methods and systems for operating multi-core processors

SAMSUNG ELECTRONICS CO LTD4 citations67
US6534400B2Mar 18, 2003

Method for depositing a tungsten silicide layer

SAMSUNG ELECTRONICS CO LTD4 citations63
US7629218B2Dec 8, 2009

Method of manufacturing a capacitor and method of manufacturing a semiconductor device using the same

SAMSUNG ELECTRONICS CO LTD5 citations62
US10915257B2Feb 9, 2021

Semiconductor device and semiconductor system

SAMSUNG ELECTRONICS CO LTD0 citations61
US11521987B2Dec 6, 2022

Vertical memory devices

SAMSUNG ELECTRONICS CO LTD0 citations60
US10943918B2Mar 9, 2021

Vertical memory devices

SAMSUNG ELECTRONICS CO LTD0 citations60
US7008876B2Mar 7, 2006

Method of forming gate electrode structure of a semiconductor device

SAMSUNG ELECTRONICS CO LTD2 citations59
US10117278B2Oct 30, 2018

Method for connection between electronic devices and electronic device thereof

SAMSUNG ELECTRONICS CO LTD1 citations52
US9965183B2May 8, 2018

Method for processing data in storage device and storage device

SAMSUNG ELECTRONICS CO LTD1 citations52
US7101803B2Sep 5, 2006

Method of trench isolation and method for manufacturing a non-volatile memory device using the same

SAMSUNG ELECTRONICS CO LTD1 citations52
US9276132B2Mar 1, 2016

Nonvolatile memory device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US10181723B2Jan 15, 2019

Circuits and methods to selectively switch power signal generator inputs to a load

SAMSUNG ELECTRONICS CO LTD0 citations37

HYUNDAI MOTOR CO LTD

5 patents

NHN BUSINESS PLATFORM CORP

4 patents

KOREA ELECTRONICS TECHNOLOGY

3 patents

KBWS CORP

3 patents

JEE JUNG-GEUN

2 patents

NHN CORP

1 patent

HA JUNG SOO

1 patent

LEE WOONG

1 patent

KANG HYUNG WON

1 patent

KIM JUNG-HWAN

1 patent

SK SILTRON CO LTD

1 patent

HYUNDAI MOBIS CO LTD

1 patent

LEE WOO SUNG

1 patent

NAVER CORP

1 patent

SAMSUNG ELECTRO MECH

1 patent