Inventor
HO IRVING T
US8 patents
Patents
8 patentsUS4462040AJul 24, 1984
Single electrode U-MOSFET random access memory
IBM60 citations95
US4252579AFeb 24, 1981
Method for making single electrode U-MOSFET random access memory utilizing reactive ion etching and polycrystalline deposition
IBM72 citations95
US4209349AJun 24, 1980
Method for forming a narrow dimensioned mask opening on a silicon body utilizing reactive ion etching
IBM95 citations95
US4209350AJun 24, 1980
Method for forming diffusions having narrow dimensions utilizing reactive ion etching
IBM65 citations95
US3943542AMar 9, 1976
High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same
IBM30 citations81
US4054989AOct 25, 1977
High reliability, low leakage, self-aligned silicon gate FET and method of fabricating same
IBM8 citations73
US4017883AApr 12, 1977
Single-electrode charge-coupled random access memory cell with impurity implanted gate region
IBM10 citations73
US4014036AMar 22, 1977
Single-electrode charge-coupled random access memory cell
IBM12 citations71