Inventor
MUDHOLKAR MIHIR
US24 patents
⚠️ This page may combine multiple inventors who share the name “MUDHOLKAR MIHIR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SEMICONDUCTOR COMPONENTS IND LLC
23 patentsUS10439075B1Oct 8, 2019
Termination structure for insulated gate semiconductor device and method
SEMICONDUCTOR COMPONENTS IND LLC10 citations83
US10608122B2Mar 31, 2020
Schottky device and method of manufacture
SEMICONDUCTOR COMPONENTS IND LLC3 citations73
US10566466B2Feb 18, 2020
Termination structure for insulated gate semiconductor device and method
SEMICONDUCTOR COMPONENTS IND LLC3 citations73
US9905500B2Feb 27, 2018
Semiconductor component and method of manufacture
SEMICONDUCTOR COMPONENTS IND LLC2 citations73
US10177232B2Jan 8, 2019
Methods for manufacturing a Schottky device with mesa regions in-between conductive trenches and having multi-concentration doping profiles
SEMICONDUCTOR COMPONENTS IND LLC3 citations72
US9716151B2Jul 25, 2017
Schottky device having conductive trenches and a multi-concentration doping profile therebetween
SEMICONDUCTOR COMPONENTS IND LLC3 citations72
US11380805B2Jul 5, 2022
Termination structure for insulated gate semiconductor device and method
SEMICONDUCTOR COMPONENTS IND LLC0 citations62
US10923604B2Feb 16, 2021
Termination structure for insulated gate semiconductor device and method
SEMICONDUCTOR COMPONENTS IND LLC0 citations62
US9552993B2Jan 24, 2017
Semiconductor device and manufacturing method thereof
SEMICONDUCTOR COMPONENTS IND LLC1 citations61
US10700219B1Jun 30, 2020
Method of manufacturing a semiconductor component
SEMICONDUCTOR COMPONENTS IND LLC0 citations52
US9647080B2May 9, 2017
Schottky device and method of manufacture
SEMICONDUCTOR COMPONENTS IND LLC0 citations52
US10847660B2Nov 24, 2020
Trench semiconductor device having multiple active trench depths and method
SEMICONDUCTOR COMPONENTS IND LLC0 citations51
US10847659B2Nov 24, 2020
Termination structure for insulated gate semiconductor device and method
SEMICONDUCTOR COMPONENTS IND LLC0 citations51
US10431699B2Oct 1, 2019
Trench semiconductor device having multiple active trench depths and method
SEMICONDUCTOR COMPONENTS IND LLC0 citations51
US9859449B2Jan 2, 2018
Method of forming trench semiconductor device having multiple trench depths
SEMICONDUCTOR COMPONENTS IND LLC0 citations51
US9716187B2Jul 25, 2017
Trench semiconductor device having multiple trench depths and method
SEMICONDUCTOR COMPONENTS IND LLC1 citations51
US10211060B2Feb 19, 2019
Semiconductor device and manufacturing method thereof
SEMICONDUCTOR COMPONENTS IND LLC0 citations50
US9773895B2Sep 26, 2017
Half-bridge HEMT circuit and an electronic package including the circuit
SEMICONDUCTOR COMPONENTS IND LLC0 citations50
US9478426B2Oct 25, 2016
Semiconductor device and manufacturing method thereof
SEMICONDUCTOR COMPONENTS IND LLC0 citations50
US11469312B2Oct 11, 2022
Remote contacts for a trench semiconductor device and methods of manufacturing semiconductor devices
SEMICONDUCTOR COMPONENTS IND LLC0 citations48
US10797182B2Oct 6, 2020
Trench semiconductor device having shaped gate dielectric and gate electrode structures and method
SEMICONDUCTOR COMPONENTS IND LLC0 citations41
US10388801B1Aug 20, 2019
Trench semiconductor device having shaped gate dielectric and gate electrode structures and method
SEMICONDUCTOR COMPONENTS IND LLC0 citations41
US10593760B2Mar 17, 2020
Method for forming trench semiconductor device having Schottky barrier structure
SEMICONDUCTOR COMPONENTS IND LLC0 citations38