Inventor
MACHKAOUTSAN VLADIMIR
BE33 patents
⚠️ This page may combine multiple inventors who share the name “MACHKAOUTSAN VLADIMIR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
QUALCOMM INC
15 patentsUS9871121B2Jan 16, 2018
Semiconductor device having a gap defined therein
QUALCOMM INC25 citations94
US9793164B2Oct 17, 2017
Self-aligned metal cut and via for back-end-of-line (BEOL) processes for semiconductor integrated circuit (IC) fabrication, and related processes and devices
QUALCOMM INC23 citations94
US9257556B2Feb 9, 2016
Silicon germanium FinFET formation by Ge condensation
QUALCOMM INC19 citations93
US9953979B2Apr 24, 2018
Contact wrap around structure
QUALCOMM INC8 citations84
US9824936B2Nov 21, 2017
Adjacent device isolation
QUALCOMM INC6 citations84
US9799560B2Oct 24, 2017
Self-aligned structure
QUALCOMM INC13 citations84
US10157992B2Dec 18, 2018
Nanowire device with reduced parasitics
QUALCOMM INC3 citations73
US10043796B2Aug 7, 2018
Vertically stacked nanowire field effect transistors
QUALCOMM INC4 citations73
US10032678B2Jul 24, 2018
Nanowire channel structures of continuously stacked nanowires for complementary metal oxide semiconductor (CMOS) devices
QUALCOMM INC3 citations73
US9728718B2Aug 8, 2017
Magnetic tunnel junction (MTJ) device array
QUALCOMM INC3 citations73
US9570509B2Feb 14, 2017
Magnetic tunnel junction (MTJ) device array
QUALCOMM INC2 citations73
US9502414B2Nov 22, 2016
Adjacent device isolation
QUALCOMM INC4 citations73
US10079293B2Sep 18, 2018
Semiconductor device having a gap defined therein
QUALCOMM INC1 citations52
US9564518B2Feb 7, 2017
Method and apparatus for source-drain junction formation in a FinFET with in-situ doping
QUALCOMM INC0 citations52
US9496181B2Nov 15, 2016
Sub-fin device isolation
QUALCOMM INC0 citations52
ASM IP HOLDING BV
8 patentsUS10361201B2Jul 23, 2019
Semiconductor structure and device formed using selective epitaxial process
ASM IP HOLDING BV412 citations99
US9240412B2Jan 19, 2016
Semiconductor structure and device and methods of forming same using selective epitaxial process
ASM IP HOLDING BV503 citations99
US8841182B1Sep 23, 2014
Silane and borane treatments for titanium carbide films
ASM IP HOLDING BV529 citations98
US9553148B2Jan 24, 2017
Method of making a wire-based semiconductor device
ASM IP HOLDING BV10 citations84
US9236247B2Jan 12, 2016
Silane and borane treatments for titanium carbide films
ASM IP HOLDING BV5 citations83
US9385164B2Jul 5, 2016
Method of making a resistive random access memory device with metal-doped resistive switching layer
ASM IP HOLDING BV4 citations73
US9012278B2Apr 21, 2015
Method of making a wire-based semiconductor device
ASM IP HOLDING BV5 citations73
US9583348B2Feb 28, 2017
Silane and borane treatments for titanium carbide films
ASM IP HOLDING BV0 citations51