Inventor
BADAROGLU MUSTAFA
BE38 patents
⚠️ This page may combine multiple inventors who share the name “BADAROGLU MUSTAFA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
QUALCOMM INC
30 patentsUS10332881B1Jun 25, 2019
Integrating a gate-all-around (GAA) field-effect transistor(s) (FET(S)) and a finFET(s) on a common substrate of a semiconductor die
QUALCOMM INC59 citations98
US10109646B1Oct 23, 2018
Selectively recessing trench isolation in three-dimensional (3D) transistors to vary channel structure exposures from trench isolation to control drive strength
QUALCOMM INC23 citations94
US9871121B2Jan 16, 2018
Semiconductor device having a gap defined therein
QUALCOMM INC25 citations94
US9793164B2Oct 17, 2017
Self-aligned metal cut and via for back-end-of-line (BEOL) processes for semiconductor integrated circuit (IC) fabrication, and related processes and devices
QUALCOMM INC23 citations94
US9953979B2Apr 24, 2018
Contact wrap around structure
QUALCOMM INC8 citations84
US9824936B2Nov 21, 2017
Adjacent device isolation
QUALCOMM INC6 citations84
US9799560B2Oct 24, 2017
Self-aligned structure
QUALCOMM INC13 citations84
US10283526B2May 7, 2019
Standard cell circuits employing voltage rails electrically coupled to metal shunts for reducing or avoiding increases in voltage drop
QUALCOMM INC5 citations73
US10157992B2Dec 18, 2018
Nanowire device with reduced parasitics
QUALCOMM INC3 citations73
US10090244B2Oct 2, 2018
Standard cell circuits employing high aspect ratio voltage rails for reduced resistance
QUALCOMM INC2 citations73
US10043796B2Aug 7, 2018
Vertically stacked nanowire field effect transistors
QUALCOMM INC4 citations73
US10032678B2Jul 24, 2018
Nanowire channel structures of continuously stacked nanowires for complementary metal oxide semiconductor (CMOS) devices
QUALCOMM INC3 citations73
US9985014B2May 29, 2018
Minimum track standard cell circuits for reduced area
QUALCOMM INC4 citations73
US9728718B2Aug 8, 2017
Magnetic tunnel junction (MTJ) device array
QUALCOMM INC3 citations73
US9570509B2Feb 14, 2017
Magnetic tunnel junction (MTJ) device array
QUALCOMM INC2 citations73
US9502414B2Nov 22, 2016
Adjacent device isolation
QUALCOMM INC4 citations73
US12524372B2Jan 13, 2026
Folding column adder architecture for digital compute in memory
QUALCOMM INC1 citations64
US12340304B2Jun 24, 2025
Partial sum management and reconfigurable systolic flow architectures for in-memory computation
QUALCOMM INC1 citations64
US12541340B2Feb 3, 2026
Accumulator for digital computation-in-memory architectures
QUALCOMM INC0 citations62
US12513915B2Dec 30, 2025
Dynamic random-access memory (DRAM) on hot compute logic for last-level-cache
QUALCOMM INC0 citations62
US11121075B2Sep 14, 2021
Hybrid metallization interconnects for power distribution and signaling
QUALCOMM INC0 citations62
US12074109B2Aug 27, 2024
Trench power rail in cell circuits to reduce resistance and related power distribution networks and fabrication methods
QUALCOMM INC0 citations52
US12019905B2Jun 25, 2024
Digital compute in memory
QUALCOMM INC0 citations52
US10079293B2Sep 18, 2018
Semiconductor device having a gap defined therein
QUALCOMM INC1 citations52
US9564518B2Feb 7, 2017
Method and apparatus for source-drain junction formation in a FinFET with in-situ doping
QUALCOMM INC0 citations52
US9496181B2Nov 15, 2016
Sub-fin device isolation
QUALCOMM INC0 citations52
US11581037B2Feb 14, 2023
Digital compute-in-memory (DCIM) bit cell circuit layouts and DCIM arrays for multiple operations per column
QUALCOMM INC0 citations51
US9666481B2May 30, 2017
Reduced height M1 metal lines for local on-chip routing
QUALCOMM INC0 citations51
US9349686B2May 24, 2016
Reduced height M1 metal lines for local on-chip routing
QUALCOMM INC0 citations51
US10411091B1Sep 10, 2019
Integrated circuits employing a field gate(s) without dielectric layers and/or work function metal layers for reduced gate layout parasitic resistance, and related methods
QUALCOMM INC0 citations42