Inventor
YEH YEN-HUNG
TW25 patents
⚠️ This page may combine multiple inventors who share the name “YEH YEN-HUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
22 patentsUS6458642B1Oct 1, 2002
Method of fabricating a sonos device
MACRONIX INT CO LTD71 citations96
US6834013B2Dec 21, 2004
Method for programming and erasing non-volatile memory with nitride tunneling layer
MACRONIX INT CO LTD19 citations92
US6587387B1Jul 1, 2003
Device and method for testing mask ROM for bitline to bitline isolation leakage
MACRONIX INT CO LTD18 citations92
US7187527B2Mar 6, 2007
Electrostatic discharge conduction device and mixed power integrated circuits using same
MACRONIX INT CO LTD29 citations90
US6649971B1Nov 18, 2003
Nitride read-only memory cell for improving second-bit effect and method for making thereof
MACRONIX INT CO LTD18 citations84
US6482706B1Nov 19, 2002
Method to scale down device dimension using spacer to confine buried drain implant
MACRONIX INT CO LTD16 citations84
US7087968B1Aug 8, 2006
Electrostatic discharge protection circuit and semiconductor circuit therewith
MACRONIX INT CO LTD13 citations83
US6706575B2Mar 16, 2004
Method for fabricating a non-volatile memory
MACRONIX INT CO LTD7 citations73
US6440803B1Aug 27, 2002
Method of fabricating a mask ROM with raised bit-line on each buried bit-line
MACRONIX INT CO LTD10 citations73
US7291870B2Nov 6, 2007
Electrostatic protection circuit
MACRONIX INT CO LTD3 citations62
US7193274B2Mar 20, 2007
ESD protection structure and method utilizing substrate triggering for a high-voltage tolerant pad
MACRONIX INT CO LTD4 citations62
US7012305B2Mar 14, 2006
Electro-static discharge protection circuit for dual-polarity input/output pad
MACRONIX INT CO LTD5 citations62
US6919607B2Jul 19, 2005
Structure of two-bit mask read-only memory device and fabricating method thereof
MACRONIX INT CO LTD2 citations62
US6838691B2Jan 4, 2005
Chalcogenide memory and method of manufacturing the same
MACRONIX INT CO LTD4 citations62
US6713821B2Mar 30, 2004
Structure of a mask ROM device
MACRONIX INT CO LTD3 citations62
US6709921B2Mar 23, 2004
Fabrication method for a flash memory device with a split floating gate and a structure thereof
MACRONIX INT CO LTD6 citations62
US6590266B1Jul 8, 2003
2-bit mask ROM device and fabrication method thereof
MACRONIX INT CO LTD4 citations62
US6531361B1Mar 11, 2003
Fabrication method for a memory device
MACRONIX INT CO LTD5 citations62
US6514807B1Feb 4, 2003
Method for fabricating semiconductor device applied system on chip
MACRONIX INT CO LTD4 citations62
US7002849B2Feb 21, 2006
Method for programming and erasing non-volatile memory with nitride tunneling layer
MACRONIX INT CO LTD0 citations52
US6790730B2Sep 14, 2004
Fabrication method for mask read only memory device
MACRONIX INT CO LTD0 citations52
US7573102B2Aug 11, 2009
ESD protection structure and method utilizing substrate triggering for a high-voltage tolerant pad
MACRONIX INT CO LTD1 citations51