Inventor
DAHM JONATHAN C
US6 patents
Patents
6 patentsUS5300187AApr 5, 1994
Method of removing contaminants
MOTOROLA INC66 citations93
US4428975AJan 31, 1984
Process for improving nitride deposition on a semiconductor wafer
MOTOROLA INC28 citations89
US5431778AJul 11, 1995
Dry etch method using non-halocarbon source gases
MOTOROLA INC23 citations86
US4402997ASep 6, 1983
Process for improving nitride deposition on a semiconductor wafer by purging deposition tube with oxygen
MOTOROLA INC37 citations86
US5250165AOct 5, 1993
Controlled isotropy reactive ion etcher for multi-stepped sloped contact etch process
MOTOROLA INC13 citations68
US5377072ADec 27, 1994
Single metal-plate bypass capacitor
MOTOROLA INC17 citations66