Inventor

XIANYU WENXU

KR79 patents

⚠️ This page may combine multiple inventors who share the name “XIANYU WENXU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

XIANYU WENXU

SAMSUNG ELECTRONICS CO LTD

Fin structure and method of manufacturing fin transistor adopting the fin structure

Method of fabricating orientation-controlled single-crystalline wire and method of fabricating transistor having the same

Method of manufacturing single crystal Si film

Si nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same

Poly-Si thin film transistor and organic light-emitting display having the same

Nonvolatile memory transistor having poly-silicon fin, stacked nonvolatile memory device having the transistor, method of fabricating the transistor, and method of fabricating the device

Method of manufacturing a thin film transistor

Semi-conductor-on-insulator structure, semiconductor devices using the same and method of manufacturing the same

Structure of strained silicon on insulator and method of manufacturing the same

Poly-Si thin film transistor and organic light-emitting display having the same

Structure of strained silicon on insulator and method of manufacturing the same

Thin film transistor and method of manufacturing the same

Organic light emitting display with single crystalline silicon TFT and method of fabricating the same

Bottom gate thin film transistor and method of manufacturing the same

Semiconductor device including single crystal silicon layer

Optoelectronic device, and image sensor and electronic device including the same

Method of manufacturing thin film transistor

Crystalline nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same

Semiconductor device including poly-Si and method of manufacturing the same

Method of manufacturing a stacked transistor having a polycrystalline Si film

Si nanowire substrate

Structure of strained silicon on insulator and method of manufacturing the same

Method of forming a more highly-oriented silicon layer and substrate having the same

Substrate with locally integrated single crystalline silicon layer and method of fabricating the same

Electronic device and method of manufacturing the same

Microlens and an image sensor including a microlens

Bottom gate thin film transistor and method of manufacturing the same

Complementary metal oxide semiconductor image sensor and method of manufacturing the same

WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECH CO LTD

Foldable mechanism and display device

Display panel

Thin film transistor, array substrate, and method for fabricating array substrate

OLED display device comprising touch sensor, and method for manufacturing same

Display device and vehicle

Display panel and display device including a cathode layer having a plurality of cathode units

Method for fabricating array substrate

Display panel with organic light-transmissive thin films and manufacturing method thereof

Display panel and manufacturing method thereof

Display panel with color organic light-transmissive thin films and manufacturing method thereof

OLED display device including touch sensors and method for manufacturing same

OLED display device and manufacturing method thereof

Display panel and temperature regulation method therefor

Thin film transistor including active layer heterostructure method of manufacturing same, and display panel

Display panel and display device

Display panel and manufacturing method thereof

YIN HUAXIANG

Method of forming poly-si pattern, diode having poly-si pattern, multi-layer cross point resistive memory device having poly-si pattern, and method of manufacturing the diode and the memory device

Poly-Si thin film transistor and organic light-emitting display having the same

Method of forming a microlens and a method for manufacturing an image sensor

XIANYU WENXU

Graphene devices and methods of manufacturing the same

Single crystal silicon rod fabrication methods and a single crystal silicon rod structure

LEE JEONG-YUB

Electrode structures, gallium nitride based semiconductor devices including the same and methods of manufacturing the same