Inventor

WANG ZIHUI

US56 patents

⚠️ This page may combine multiple inventors who share the name “WANG ZIHUI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WANG ZIHUI

AVALANCHE TECHNOLOGY INC

Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer

Magnetic random access memory having perpendicular enhancement layer

Multilayered seed for perpendicular magnetic structure

Perpendicular magnetic memory element having magnesium oxide cap layer

Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer

Magnetic random access memory with perpendicular enhancement layer

Magnetic random access memory with perpendicular enhancement layer

Magnetoresistive logic cell and method of use

Multilayered seed for perpendicular magnetic structure including an oxide layer

Magnetic random access memory with perpendicular enhancement layer

Multilayered seed structure for magnetic memory element including a CoFeB seed layer

Multilayered seed structure for magnetic memory element including a CoFeB seed layer

Magnetic random access memory with ultrathin reference layer

Method for sensing memory element coupled to selector device

Magnetic memory element including oxide/metal composite layers formed adjacent to fixed layer

Perpendicular magnetic fixed layer with high anisotropy

Magnetic random access memory with ultrathin reference layer

Magnetic random access memory with ultrathin reference layer

Magnetic memory element with composite fixed layer

Magnetic random access memory with perpendicular enhancement layer

Spin-orbitronics device and applications thereof

Unipolar-switching perpendicular MRAM and method for using same

Magnetic random access memory having perpendicular composite reference layer

Devices and methods for measurement of magnetic characteristics of MRAM wafers using magnetoresistive test strips

Electric field assisted MRAM and method for using the same

Magnetic tunnel junction with non-metallic layer adjacent to free layer

Spin-transfer torque magnetic random access memory (STTMRAM) device with shared transistor and minimal written data disturbance

Shields for magnetic memory chip packages

Magnetic memory element with iridium anti-ferromagnetic coupling layer

Nonvolatile memory device including dual memory layers

Nonvolatile memory device including dual memory layers

Multilayered seed for perpendicular magnetic structure including an oxide layer

Magnetic memory element including perpendicular enhancement layers and dual oxide cap layers

Magnetic memory element incorporating dual perpendicular enhancement layers

Multilayered seed for perpendicular magnetic structure

Magnetic random access memory having perpendicular enhancement layer and interfacial anisotropic free layer

Magnetoresistive layer structure with voltage-induced switching and logic cell application

Method and apparatus for programming a spin-transfer torque magnetic random access memory (STTMRAM) array

Memory cell including two selectors and method of making same

Shielding of packaged magnetic random access memory

Cross-point MRAM including self-compliance selector

Magnetic memory element incorporating dual perpendicular enhancement layers

Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer

Magnetic memory element including magnesium perpendicular enhancement layer

Spin-orbitronics device and applications thereof

Magnetic random access memory with perpendicular interfacial anisotropy

Magnetic random access memory element having tantalum perpendicular enhancement layer

Magnetic tunnel junction with perpendicular enhancement layer and thin reference layer

ZHOU YUCHEN

Magnetoresistive logic cell and method of use

WANG ZIHUI

Method for bit-error rate testing of resistance-based RAM cells using a reflected signal