Inventor

GAN HUADONG

US34 patents

Patents

34 patents

US9793319B2Oct 17, 2017

Multilayered seed structure for perpendicular MTJ memory element

AVALANCHE TECHNOLOGY INC46 citations98

US9780300B2Oct 3, 2017

Magnetic memory element with composite perpendicular enhancement layer

AVALANCHE TECHNOLOGY INC36 citations98

US9608038B2Mar 28, 2017

Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer

AVALANCHE TECHNOLOGY INC40 citations98

US9070855B2Jun 30, 2015

Magnetic memory element including oxide/metal composite layers formed adjacent to fixed layer

AVALANCHE TECHNOLOGY INC3 citations73

US10008663B1Jun 26, 2018

Perpendicular magnetic fixed layer with high anisotropy

AVALANCHE TECHNOLOGY INC6 citations73

US9871190B2Jan 16, 2018

Magnetic random access memory with ultrathin reference layer

AVALANCHE TECHNOLOGY INC2 citations73

US9871191B2Jan 16, 2018

Magnetic random access memory with ultrathin reference layer

AVALANCHE TECHNOLOGY INC4 citations73

US9831421B2Nov 28, 2017

Magnetic memory element with composite fixed layer

AVALANCHE TECHNOLOGY INC4 citations73

US9647202B2May 9, 2017

Magnetic random access memory with perpendicular enhancement layer

AVALANCHE TECHNOLOGY INC2 citations73

US9647032B2May 9, 2017

Spin-orbitronics device and applications thereof

AVALANCHE TECHNOLOGY INC4 citations73

US9396781B2Jul 19, 2016

Magnetic random access memory having perpendicular composite reference layer

AVALANCHE TECHNOLOGY INC3 citations73

US10032979B2Jul 24, 2018

Magnetic memory element with iridium anti-ferromagnetic coupling layer

AVALANCHE TECHNOLOGY INC2 citations70

US10079338B2Sep 18, 2018

Magnetic memory element with perpendicular enhancement layer

AVALANCHE TECHNOLOGY INC1 citations63

US9496489B2Nov 15, 2016

Magnetic random access memory with multilayered seed structure

AVALANCHE TECHNOLOGY INC2 citations63

US9419207B2Aug 16, 2016

Magnetic random access memory with multilayered seed structure

AVALANCHE TECHNOLOGY INC1 citations63

US9231027B2Jan 5, 2016

Magnetic random access memory having perpendicular enhancement layer and interfacial anisotropic free layer

AVALANCHE TECHNOLOGY INC2 citations63

US9024398B2May 5, 2015

Perpendicular STTMRAM device with balanced reference layer

AVALANCHE TECHNOLOGY INC3 citations63

US10347691B2Jul 9, 2019

Magnetic memory element with multilayered seed structure

AVALANCHE TECHNOLOGY INC0 citations52

US10008540B2Jun 26, 2018

Spin-orbitronics device and applications thereof

AVALANCHE TECHNOLOGY INC0 citations52

US9634244B2Apr 25, 2017

Magnetic random access memory with perpendicular interfacial anisotropy

AVALANCHE TECHNOLOGY INC0 citations52

US9559144B2Jan 31, 2017

Magnetic random access memory element having tantalum perpendicular enhancement layer

AVALANCHE TECHNOLOGY INC0 citations52

US9548334B2Jan 17, 2017

Magnetic tunnel junction with perpendicular enhancement layer and thin reference layer

AVALANCHE TECHNOLOGY INC0 citations52

US9543506B2Jan 10, 2017

Magnetic random access memory with tri-layer reference layer

AVALANCHE TECHNOLOGY INC0 citations52

US9444038B2Sep 13, 2016

Magnetic random access memory with nickel/transition metal multilayered seed structure

AVALANCHE TECHNOLOGY INC0 citations52

US9337417B2May 10, 2016

Magnetic random access memory with perpendicular interfacial anisotropy

AVALANCHE TECHNOLOGY INC1 citations52

US9443577B2Sep 13, 2016

Voltage-switched magnetic random access memory (MRAM) and method for using the same

AVALANCHE TECHNOLOGY INC0 citations42

GAN HUADONG

Patents

Multilayered seed structure for perpendicular MTJ memory element

Magnetic memory element with composite perpendicular enhancement layer

Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layer

Magnetic random access memory having perpendicular enhancement layer

Magnetic random access memory with multiple free layers

Magnetic structure with multilayered seed

Perpendicular magnetic memory element having magnesium oxide cap layer

Magnetic random access memory with perpendicular enhancement layer

Magnetic random access memory with perpendicular enhancement layer

Magnetic random access memory with perpendicular enhancement layer

Magnetic random access memory with ultrathin reference layer

Magnetic memory element including oxide/metal composite layers formed adjacent to fixed layer

Perpendicular magnetic fixed layer with high anisotropy

Magnetic random access memory with ultrathin reference layer

Magnetic random access memory with ultrathin reference layer

Magnetic memory element with composite fixed layer

Magnetic random access memory with perpendicular enhancement layer

Spin-orbitronics device and applications thereof

Magnetic random access memory having perpendicular composite reference layer

Magnetic memory element with iridium anti-ferromagnetic coupling layer

Magnetic memory element with perpendicular enhancement layer

Magnetic random access memory with multilayered seed structure

Magnetic random access memory with multilayered seed structure

Magnetic random access memory having perpendicular enhancement layer and interfacial anisotropic free layer

Perpendicular STTMRAM device with balanced reference layer

Magnetic memory element with multilayered seed structure

Spin-orbitronics device and applications thereof

Magnetic random access memory with perpendicular interfacial anisotropy

Magnetic random access memory element having tantalum perpendicular enhancement layer

Magnetic tunnel junction with perpendicular enhancement layer and thin reference layer

Magnetic random access memory with tri-layer reference layer

Magnetic random access memory with nickel/transition metal multilayered seed structure

Magnetic random access memory with perpendicular interfacial anisotropy

Voltage-switched magnetic random access memory (MRAM) and method for using the same