Inventor
MONROY GONZALO ANTONIO
US9 patents
Patents
9 patentsUS7291545B2Nov 6, 2007
Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage
APPLIED MATERIALS INC73 citations98
US7137354B2Nov 21, 2006
Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage
APPLIED MATERIALS INC63 citations98
US7037813B2May 2, 2006
Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
APPLIED MATERIALS INC76 citations98
US7700465B2Apr 20, 2010
Plasma immersion ion implantation process using a plasma source having low dissociation and low minimum plasma voltage
APPLIED MATERIALS INC25 citations92
US7320734B2Jan 22, 2008
Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage
APPLIED MATERIALS INC24 citations92
US7303982B2Dec 4, 2007
Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage
APPLIED MATERIALS INC33 citations92
US10544505B2Jan 28, 2020
Deposition or treatment of diamond-like carbon in a plasma reactor
APPLIED MATERIALS INC12 citations85
US7430984B2Oct 7, 2008
Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements
APPLIED MATERIALS INC15 citations84
US9721760B2Aug 1, 2017
Electron beam plasma source with reduced metal contamination
APPLIED MATERIALS INC0 citations42