Inventor

LEE MINHYUN

KR53 patents

⚠️ This page may combine multiple inventors who share the name “LEE MINHYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LEE MINHYUN

SAMSUNG ELECTRONICS CO LTD

Semiconductor device including metal-2 dimensional material-semiconductor contact

Semiconductor device including metal-2 dimensional material-semiconductor contact

Field effect transistor including gate insulating layer formed of two-dimensional material

Semiconductor device including metal-2 dimensional material-semiconductor contact

Pellicles for photomasks, reticles including the photomasks, and methods of manufacturing the pellicles

Pellicle for photomask, reticle including the same, and exposure apparatus for lithography

Semiconductor device including metal-2 dimensional material-semiconductor contact

Phase change memory devices including two-dimensional material and methods of operating the same

Electronics device having two-dimensional (2D) material layer and method of manufacturing the electronic device by inkjet printing

Semiconductor device including two-dimensional semiconductor material

Wiring including graphene layer and method of manufacturing the same

Field effect transistor including gate insulating layer formed of two-dimensional material

Transistor including two-dimensional (2D) channel

Semiconductor device including two-dimensional semiconductor material

Semiconductor device including metal-2 dimensional material-semiconductor contact

Superlattice structure including two-dimensional material and device including the superlattice structure

Field effect transistor including channel formed of 2D material

Vertical type transistor, inverter including the same, and vertical type semiconductor device including the same

Pellicles for photomasks, reticles including the photomasks, and methods of manufacturing the pellicles

Superlattice structure including two-dimensional material and device including the superlattice structure

Vertical type transistor, inverter including the same, and vertical type semiconductor device including the same

Field effect transistor including channel formed of 2D material

Semiconductor device including two-dimensional semiconductor material

Transistor including two-dimensional (2D) channel

Superlattice structure including two-dimensional material and device including the superlattice structure

Semiconductor device including metal-semiconductor junction

Field effect transistor including channels having a hollow closed cross-sectional structure and method of manufacturing the same

Vertical nonvolatile memory device including memory cell string

Interconnect structure and electronic apparatus including the same

Two-dimensional material-based wiring conductive layer contact structures, electronic devices including the same, and methods of manufacturing the electronic devices

Semiconductor memory device and apparatus including the same

Field effect transistor and method of manufacturing the same

Two-dimensional material-based wiring conductive layer contact structures, electronic devices including the same, and methods of manufacturing the electronic devices

Interconnect structure and electronic apparatus including the same

Semiconductor memory device and apparatus including the same

Nonvolatile memory apparatus including resistive-change material layer

Lithium ion battery including nano-crystalline graphene electrode

Nonvolatile memory apparatus including resistive-change material layer

Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layer

Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layer

Memristor and neuromorphic device comprising the same

Nonvolatile memory device and operating method of the same

Memristor and neuromorphic device comprising the same

Nonvolatile memory device and operating method of the same

Image sensors integrated with infrared sensors and electronic devices including the same

Light-emitting device comprising photonic cavity

Electronic device having two-dimensional (2D) material layer and method of manufacturing the electronic device by inkjet printing

Fin-type graphene device

Vertical NAND flash memory device and method of manufacturing the same

UIF UNIV INDUSTRY FOUNDATION YONSEI UNIV

Weakly supervised semantic segmentation device and method based on pseudo-masks