Inventor

WANN CLEMENT HSINGJEN

US282 patents

⚠️ This page may combine multiple inventors who share the name “WANN CLEMENT HSINGJEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WANN CLEMENT HSINGJEN

TAIWAN SEMICONDUCTOR MFG CO LTD

FinFETs with strained well regions

FinFETs with strained well regions

FinFET devices with unique fin shape and the fabrication thereof

Wrap-around contact

Mechanism for FinFET well doping

Method of metal gate formation and structures formed by the same

FinFET device having a channel defined in a diamond-like shape semiconductor structure

Wrap-around contact on FinFET

Wrap-around contact on FinFET

Method of forming strained structures of semiconductor devices

Self-aligned passivation of active regions

Source/drain profile for FinFET

Wrap-around contact on FinFET

Semiconductor logic circuits fabricated using multi-layer structures

Methods for forming semiconductor regions in trenches

Method of semiconductor arrangement formation

Semiconductor structures and methods with high mobility and high energy bandgap materials

TAIWAN SEMICONDUCTOR MFG

Contact structure of semiconductor device

Fin structure of FinFET

Contact structure of semiconductor device

Fin-last FinFET and methods of forming same

Integrated circuit layout design

Integrated circuit layout design

FinFETs with strained well regions

System and methods for converting planar design to FinFET design

CMOS FinFET device

Self-aligned dual-metal silicide and germanide formation

FinFETs and methods for forming the same

WU CHENG-HSIEN

Semiconductor structures and methods with high mobility and high energy bandgap materials

Contact structure of semiconductor device

FinFET design and method of fabricating same

Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces

Method of forming CMOS FinFET device

Semiconductor device with enhanced strain

WANN CLEMENT HSINGJEN

System and methods for converting planar design to FinFET design

Re-growing source/drain regions from un-relaxed silicon layer

Selective fin-shaping process using plasma doping and etching for 3-dimensional transistor applications

KO CHIH-HSIN

High-mobility multiple-gate transistor with improved on-to-off current ratio

Fin structure for high mobility multiple-gate transistor

Gradient ternary or quaternary multiple-gate transistor

YEH CHIH CHIEH

Germanium FinFETs with metal gates and stressors

Accumulation type FinFET, circuits and fabrication method thereof

TSAI JI-YIN

In-situ doping of arsenic for source and drain epitaxy

Semiconductor devices and methods of manufacture thereof

LEE TSUNG-LIN

Strained structure of semiconductor device and method of making the strained structure

LIN YOU-RU

FinFET device having a channel defined in a diamond-like shape semiconductor structure

WAN CHENG-TIEN

Method for epitaxial re-growth of semiconductor region

LAI LI-SHYUE

Finfets and methods for forming the same

LIU KUAN-TING

Multi-layer scavenging metal gate stack for ultra-thin interfacial dielectric layer

LIN YI-TANG

System and methods for converting planar design to FinFET design