Inventor

TSAI MING-HUAN

TW68 patents

⚠️ This page may combine multiple inventors who share the name “TSAI MING-HUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TSAI MING-HUAN

TAIWAN SEMICONDUCTOR MFG

Fin-last FinFET and methods of forming same

Partial resist free approach in contact etch to improve W-filling

Photoresist intensive patterning and processing

Method using wet etching to trim a critical dimension

Bi-layer photoresist dry development and reactive ion etch method

Method of making borderless contact having a sion buffer layer

Process flow to optimize profile of ultra small size photo resist free contact

FinFETs and methods for forming the same

Method for forming integrated advanced semiconductor device using sacrificial stress layer

Gate structure and method of forming the gate dielectric with mini-spacer

Method of forming contact plug on silicide structure

Selectivity oxide-to-oxynitride etch process using a fluorine containing gas, an inert gas and a weak oxidant

Semiconductor device having modified profile metal gate

Method of forming a germanium-containing FinFET

Fin-last finFET and methods of forming same

Integrated circuit device with well controlled surface proximity and method of manufacturing same

Contact or via hole structure with enlarged bottom critical dimension

Bi-level resist structure and fabrication method for contact holes on semiconductor substrates

Bi-layer photoresist method for forming high resolution semiconductor features

Method for forming novel BARC open for precision critical dimension control

Bi-level resist structure and fabrication method for contact holes on semiconductor substrates

Metal silicide etch resistant plasma etch method

Replacement channels for semiconductor devices and methods for forming the same using dopant concentration boost

Strained structure of semiconductor device

Borderless interconnection process

Methods for improving sheet resistance of silicide layer after removal of etch stop layer

Multiple etch method for fabricating spacer layers

Method of manufacturing strained source/drain structures

Strained semiconductor device with recessed channel

TAIWAN SEMICONDUCTOR MFG CO LTD

Gate structure for semiconductor device

Fin field-effect transistor device and method

Semiconductor device having modified profile metal gate

Combination FinFET and methods of forming same

FinFETs with necking in the fins

Fin-last FinFET and methods of forming same

Semiconductor device having modified profile metal gate

TSAI MING-HUAN

Source and drain feature profile for improving device performance and method of manufacturing same

Method of manufacturing integrated circuit device with well controlled surface proximity

Integrated circuit device with well controlled surface proximity and method of manufacturing same

Source and drain feature profile for improving device performance

Strained structure of semiconductor device

UNITED MICROELECTRONICS CORP

Eliminating etching microloading effect by in situ deposition and etching

Shrinking equal effect critical dimension of mask by in situ polymer deposition and etching

MOSEL VITELIC INC

Method for forming low contact resistance bonding pad

TSAI MING HUAN

Bi-layer photoresist dry development and reactive ion etch method

NIEH CHUN-FENG

Method of manufacturing strained source/drain structures

FAN WEI-HAN

Facet-free semiconductor device

SUNG HSUEH-CHANG

High performance strained source-drain structure and method of fabricating the same

GRAND PLASTIC TECHNOLOGY CORP

Method for wet etching of high k thin film at low temperature

HSU YU-RUNG

Method of fabricating strained structure in semiconductor device