P

Inventor

TAKEGUCHI TETSUJI

JP14 patents

Patents

14 patents
US5608670AMar 4, 1997

Flash memory with improved erasability and its circuitry

FUJITSU LTD66 citations96
US5576637ANov 19, 1996

XOR CMOS logic gate

FUJITSU LTD40 citations96
US5619450AApr 8, 1997

Drive circuit for flash memory with improved erasability

FUJITSU LTD54 citations95
US5770963AJun 23, 1998

Flash memory with improved erasability and its circuitry

FUJITSU LTD19 citations92
US5592419AJan 7, 1997

Flash memory with improved erasability and its circuitry

FUJITSU LTD23 citations92
US5400276AMar 21, 1995

Electrically erasable nonvolatile semiconductor memory that permits data readout despite the occurrence of over-erased memory cells

FUJITSU LTD23 citations92
US4720818AJan 19, 1988

Semiconductor memory device adapted to carry out operation test

FUJITSU LTD25 citations92
US6735120B2May 11, 2004

Semiconductor device having a high-speed data read operation

FUJITSU LTD15 citations91
US6532174B2Mar 11, 2003

Semiconductor memory device having high speed data read operation

FUJITSU LTD15 citations91
US6215717B1Apr 10, 2001

Semiconductor memory device for reducing a time needed for performing a protecting operation

FUJITSU LTD20 citations89
US5631597AMay 20, 1997

Negative voltage circuit for a flash memory

FUJITSU LTD10 citations82
US6928000B2Aug 9, 2005

Semiconductor memory device having a resistance adjustment unit

FUJITSU LTD2 citations61
US7266015B2Sep 4, 2007

Redundancy substitution method, semiconductor memory device and information processing apparatus

FUJITSU LTD0 citations51
US7227784B2Jun 5, 2007

Nonvolatile semiconductor memory device performing erase operation that creates narrow threshold distribution

FUJITSU LTD0 citations41