Inventor
BHAT MOUSUMI
SG11 patents
⚠️ This page may combine multiple inventors who share the name “BHAT MOUSUMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CHARTERED SEMICONDUCTOR MFG
4 patentsUS6897118B1May 24, 2005
Method of multiple pulse laser annealing to activate ultra-shallow junctions
CHARTERED SEMICONDUCTOR MFG105 citations96
US7112499B2Sep 26, 2006
Dual step source/drain extension junction anneal to reduce the junction depth: multiple-pulse low energy laser anneal coupled with rapid thermal anneal
CHARTERED SEMICONDUCTOR MFG10 citations69
US7101746B2Sep 5, 2006
Method to lower work function of gate electrode through Ge implantation
CHARTERED SEMICONDUCTOR MFG3 citations61
US6872608B1Mar 29, 2005
Method to selectively form poly SiGe P type electrode and polysilicon N type electrode through planarization
CHARTERED SEMICONDUCTOR MFG2 citations55
MOTOROLA INC
4 patentsUS6686633B1Feb 3, 2004
Semiconductor device, memory cell, and processes for forming them
MOTOROLA INC16 citations91
US6184073B1Feb 6, 2001
Process for forming a semiconductor device having an interconnect or conductive film electrically insulated from a conductive member or region
MOTOROLA INC27 citations91
US6291888B1Sep 18, 2001
Contact structure and process for formation
MOTOROLA INC15 citations84
US6037246AMar 14, 2000
Method of making a contact structure
MOTOROLA INC15 citations74
TEXAS INSTRUMENTS INC
3 patentsUS5349225ASep 20, 1994
Field effect transistor with a lightly doped drain
TEXAS INSTRUMENTS INC184 citations96
US5557569ASep 17, 1996
Low voltage flash EEPROM C-cell using fowler-nordheim tunneling
TEXAS INSTRUMENTS INC90 citations95
US5515319AMay 7, 1996
Non-volatile memory cell and level shifter
TEXAS INSTRUMENTS INC67 citations95