Inventor
NAGAHAMA SHINICHI
JP36 patents
⚠️ This page may combine multiple inventors who share the name “NAGAHAMA SHINICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NICHIA CORP
23 patentsUS6711191B1Mar 23, 2004
Nitride semiconductor laser device
NICHIA CORP179 citations99
US8030665B2Oct 4, 2011
Nitride semiconductor device comprising bonded substrate and fabrication method of the same
NICHIA CORP59 citations98
US7105857B2Sep 12, 2006
Nitride semiconductor device comprising bonded substrate and fabrication method of the same
NICHIA CORP78 citations98
US7758224B2Jul 20, 2010
Light emitting device
NICHIA CORP47 citations97
US7390684B2Jun 24, 2008
Light emitting apparatus and method of manufacturing the same
NICHIA CORP74 citations97
US7301175B2Nov 27, 2007
Light emitting apparatus and method of manufacturing the same
NICHIA CORP80 citations97
US7496124B2Feb 24, 2009
Nitride semiconductor laser device
NICHIA CORP33 citations93
US7015053B2Mar 21, 2006
Nitride semiconductor laser device
NICHIA CORP14 citations93
US6835956B1Dec 28, 2004
Nitride semiconductor device and manufacturing method thereof
NICHIA CORP22 citations93
US7433115B2Oct 7, 2008
Light emitting device
NICHIA CORP17 citations92
US7378334B2May 27, 2008
Nitride semiconductor device comprising bonded substrate and fabrication method of the same
NICHIA CORP16 citations92
US7166869B2Jan 23, 2007
Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor
NICHIA CORP14 citations92
US6900465B2May 31, 2005
Nitride semiconductor light-emitting device
NICHIA CORP31 citations92
US10079470B2Sep 18, 2018
Light emitting device
NICHIA CORP5 citations84
US7095051B2Aug 22, 2006
Nitride semiconductor element
NICHIA CORP19 citations83
US7166874B2Jan 23, 2007
Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductor
NICHIA CORP6 citations74
US7083996B2Aug 1, 2006
Nitride semiconductor device and manufacturing method thereof
NICHIA CORP5 citations74
US11112069B2Sep 7, 2021
Light emitting device
NICHIA CORP1 citations73
US11841116B2Dec 12, 2023
Light emitting device
NICHIA CORP0 citations62
US11506346B2Nov 22, 2022
Light emitting device
NICHIA CORP0 citations62
US7557985B2Jul 7, 2009
Light emitting device
NICHIA CORP4 citations62
US10587091B2Mar 10, 2020
Light emitting device
NICHIA CORP0 citations52
US9720310B2Aug 1, 2017
Light source device
NICHIA CORP0 citations52
NICHIA KAGAKU KOGYO KK
8 patentsUS6677619B1Jan 13, 2004
Nitride semiconductor device
NICHIA KAGAKU KOGYO KK91 citations99
US6172382B1Jan 9, 2001
Nitride semiconductor light-emitting and light-receiving devices
NICHIA KAGAKU KOGYO KK501 citations99
US5959307ASep 28, 1999
Nitride semiconductor device
NICHIA KAGAKU KOGYO KK319 citations99
US5777350AJul 7, 1998
Nitride semiconductor light-emitting device
NICHIA KAGAKU KOGYO KK474 citations99
US7211822B2May 1, 2007
Nitride semiconductor device
NICHIA KAGAKU KOGYO KK55 citations96
US6849864B2Feb 1, 2005
Nitride semiconductor device
NICHIA KAGAKU KOGYO KK42 citations96
US6580099B2Jun 17, 2003
Nitride semiconductor light-emitting devices
NICHIA KAGAKU KOGYO KK52 citations96
US7615804B2Nov 10, 2009
Superlattice nitride semiconductor LD device
NICHIA KAGAKU KOGYO KK19 citations92