Inventor

ROCKLEIN MATTHEW N

US36 patents

⚠️ This page may combine multiple inventors who share the name “ROCKLEIN MATTHEW N”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ROCKLEIN MATTHEW N

MICRON TECHNOLOGY INC

Methods of operating ferroelectric memory cells, and related ferroelectric memory cells

Methods of forming a ferroelectric memory cell

Semiconductor devices including ferroelectric materials

Semiconductor device structures including ferroelectric memory cells

Memory cells and semiconductor devices including ferroelectric materials

Methods of operating ferroelectric memory cells, and related ferroelectric memory cells and capacitors

Methods of operating ferroelectric memory cells, and related ferroelectric memory cells and capacitors

Integrated assemblies comprising stud-type capacitors

Doped titanium nitride materials for DRAM capacitors, and related semiconductor devices, systems, and methods

Electrode/dielectric barrier material formation and structures

Storage node shaping

Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structures

Methods of forming a ferroelectric memory cell

Semiconductor devices including ferroelectric materials

Integrated assemblies comprising stud-type capacitors

Resistive memory cell

Semiconductor devices including ferroelectric materials

Formation of an atomic layer of germanium in an opening of a substrate material having a high aspect ratio

Doped titanium nitride materials for dram capacitors, and related semiconductor devices

Dielectric materials, capacitors and memory arrays

Oxidative trim

Capacitors with electrodes having a portion of material removed, and related semiconductor devices, systems, and methods

Integrated assemblies comprising stud-type capacitors

Resistive memory cell

Resistive memory cell

Semiconductor structure including a zirconium oxide material

Tamper-resistant integrated circuits, and related methods

Devices and apparatuses including asymmetric ferroelectric materials, and related methods

Fortification of charge-storing material in high-K dielectric environments and resulting apparatuses

Forming a barrier material on an electrode

Electrode formation

RAMASWAMY D V NIRMAL

Fortification of charge-storing material in high-K dielectric environments and resulting apparatuses

Fortification of charge storing material in high K dielectric environments and resulting apparatuses

ANTONOV VASSIL

Insulative elements

COLLINS DALE W

Semiconductor structure including a zirconium oxide material

ROCKLEIN MATTHEW N

Resistive memory cell