Inventor

HOLLAND MARTIN CHRISTOPHER

BE74 patents

⚠️ This page may combine multiple inventors who share the name “HOLLAND MARTIN CHRISTOPHER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HOLLAND MARTIN CHRISTOPHER

TAIWAN SEMICONDUCTOR MFG CO LTD

Vertical gate-all-around field effect transistors and methods of forming same

Barrier layer for FinFET channels

Thin-sheet FinFET device

Localized heating in laser annealing process

Method of manufacturing a semiconductor device and a semiconductor device

III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereof

Vertical gate-all-around field effect transistors

Method of forming ultra-thin nanowires

FinFET with channel backside passivation layer device and method

Method of manufacturing FinFETs having barrier layers with specified SiGe doping concentration

Formation of single crystal semiconductors using planar vapor liquid solid epitaxy

Crystalline semiconductor layer formed in BEOL processes

Method of manufacturing a semiconductor device and a semiconductor device

Crystalline semiconductor layer formed in BEOL processes

Thin-sheet FinFET device

Method of forming source/drain structure with first and second epitaxial layers

Germanium nitride layers on semiconductor structures, and methods for forming the same

Semiconductor device and method of fabricating the same

High density nanowire array

Method for forming FinFET devices

Elongated semiconductor structure planarization

Semiconductor device having reduced impurity diffusion

Formation of single crystal semiconductors using planar vapor liquid solid epitaxy

Crystalline semiconductor layer formed in BEOL processes

Method of manufacturing a heterostructure or a stacked semiconductor structure having a silicon-germanium interface

Thin-sheet FinFET device

Localized heating in laser annealing process

Semiconductor device and method

Heterogeneous semiconductor device substrates with high quality epitaxy

Localized protection layer for laser annealing process

Method of manufacturing a semiconductor device and a semiconductor device

Germanium nitride layers on semiconductor structures, and methods for forming the same

Germanium containing nanowires and methods for forming the same

GE based semiconductor device and a method for manufacturing the same

Localized protection layer for laser annealing process

Formation of single crystal semiconductors using planar vapor liquid solid epitaxy

Semiconductor device and method

Germanium nitride layers on semiconductor structures, and methods for forming the same

Method of fabricating semiconductor device with nanowires

III-V semiconductor layers, III-V semiconductor device and methods of manufacturing thereof

III-V semiconductor layers, III-V semiconductor devices and methods of manufacturing thereof

Method of forming semiconductor device having carbon nanotube

Method of manufacturing a semiconductor device and a semiconductor device

Method of forming semiconductor device having carbon nanotube

Field effect transistor and method of manufacturing the same

Method of manufacturing a semiconductor device and a semiconductor device

Metal nitride diffusion barrier and methods of formation

TAIWAN SEMICONDUCTOR MFG

Methods for forming semiconductor materials in STI trenches

Method of removing threading dislocation defect from a fin feature of III-V group semiconductor material

Methods of forming semiconductor devices and FinFET devices, and FinFET devices