Inventor
PETROV IVAN GEORGIEV
US3 patents
Patents
3 patentsUS6797598B2Sep 28, 2004
Method for forming an epitaxial cobalt silicide layer on MOS devices
UNIV ILLINOIS8 citations68
US6846359B2Jan 25, 2005
Epitaxial CoSi2 on MOS devices
UNIV ILLINOIS5 citations59
US6762131B2Jul 13, 2004
Method for large-scale fabrication of atomic-scale structures on material surfaces using surface vacancies
UNIV ILLINOIS3 citations59