Inventor
LIM GEUNWON
KR25 patents
Patents
25 patentsUS10964714B2Mar 30, 2021
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD12 citations84
US11362105B2Jun 14, 2022
Vertical memory device with support layer
SAMSUNG ELECTRONICS CO LTD2 citations73
US10910396B2Feb 2, 2021
Three-dimensional semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD6 citations73
US11985820B2May 14, 2024
Semiconductor devices and data storage systems including the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US11271003B2Mar 8, 2022
Semiconductor devices including stack structure having gate region and insulating region
SAMSUNG ELECTRONICS CO LTD3 citations72
US11233004B2Jan 25, 2022
Semiconductor device having a stacked structure
SAMSUNG ELECTRONICS CO LTD2 citations72
US11069698B2Jul 20, 2021
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD4 citations72
US10665606B2May 26, 2020
Three-dimensional semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD5 citations71
US12310021B2May 20, 2025
Vertical memory device with multiple support layers
SAMSUNG ELECTRONICS CO LTD0 citations62
US12137555B2Nov 5, 2024
Semiconductor devices including stack structure having gate region and insulating region
SAMSUNG ELECTRONICS CO LTD0 citations62
US12021022B2Jun 25, 2024
Semiconductor device having a stacked structure
SAMSUNG ELECTRONICS CO LTD0 citations62
US11917819B2Feb 27, 2024
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11744066B2Aug 29, 2023
Semiconductor devices including stack structure having gate region and insulating region
SAMSUNG ELECTRONICS CO LTD0 citations62
US11616076B2Mar 28, 2023
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations61
US12167601B2Dec 10, 2024
Three-dimensional (3D) semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations60
US11637121B2Apr 25, 2023
Three-dimensional (3D) semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations60
US11640922B2May 2, 2023
Gap-fill layers, methods of forming the same, and semiconductor devices manufactured by the methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations59
US11257708B2Feb 22, 2022
Gap-fill layers, methods of forming the same, and semiconductor devices manufactured by the methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations59
US12178043B2Dec 24, 2024
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US12002511B2Jun 4, 2024
Semiconductor devices and electronic systems including the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US11276706B2Mar 15, 2022
Vertical memory devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US10861876B2Dec 8, 2020
Three-dimensional semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD0 citations50
US11877451B2Jan 16, 2024
Vertical memory devices
SAMSUNG ELECTRONICS CO LTD0 citations48
US11980028B2May 7, 2024
Semiconductor device and data storage system including the same
SAMSUNG ELECTRONICS CO LTD0 citations47
US11587940B2Feb 21, 2023
Three-dimensional semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD0 citations47