Inventor

KONG HUA-SHUANG

US60 patents

⚠️ This page may combine multiple inventors who share the name “KONG HUA-SHUANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KONG HUA-SHUANG

CREE INC

Nickel tin bonding system with barrier layer for semiconductor wafers and devices

External extraction light emitting diode based upon crystallographic faceted surfaces

Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures

Group III nitride LED with undoped cladding layer and multiple quantum well

Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures

Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures

Double heterojunction light emitting diode with gallium nitride active layer

Vertical geometry ingan LED

Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure

Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure

Inverted light emitting diode on conductive substrate

Group III nitride LED with undoped cladding layer (5000.137)

Vertical geometry InGaN LED

Group III nitride light emitting devices with gallium-free layers

Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure

Susceptor designs for silicon carbide thin films

Group III nitride LED with undoped cladding layer

Group III nitride LED with silicon carbide substrate

Group III nitride contact structures for light emitting devices

Light emitting devices with Group III nitride contact layer and superlattice

Susceptor designs for silicon carbide thin films

Vertical geometry InGaN LED

Single step pendeo- and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures

Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure

Carrier-assisted method for parting crystalline material along laser damage region

Group III nitride LED with silicon carbide cladding layer

Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures

Vertical geometry InGaN LED

Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure

CREE RESEARCH INC

Double heterojunction light emitting diode with gallium nitride active layer

Blue light-emitting diode with high external quantum efficiency

Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product

Method of preparing silicon carbide surfaces for crystal growth

Low-strain laser structures with group III nitride active layers

Low-strain laser structures with group III nitride active layers

Vertical geometry light emitting diode with group III nitride active layer and extended lifetime

Blue light-emitting diode with degenerate junction structure

Apparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting product

DONOFRIO MATTHEW

Lamp packages

Conformal gel layers for light emitting diodes

Light emitting diode with improved light extraction

Light emitting diode (LED) arrays including direct die attach and related assemblies

Lamp packages

UNIV NORTH CAROLINA STATE

Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon

Homoepitaxial growth of Alpha-SiC thin films and semiconductor devices fabricated thereon

Growth of beta-sic thin films and semiconductor devices fabricated thereon

EDMOND JOHN A

Reflective mounting substrates for light emitting diodes

Light emitting devices, systems, and methods

WOLFSPEED INC

Carrier-assisted method for parting crystalline material along laser damage region

SLATER JR DAVID B

Nickel tin bonding system for semiconductor wafers and devices