Inventor
EMERSON DAVID TODD
US77 patents
⚠️ This page may combine multiple inventors who share the name “EMERSON DAVID TODD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CREE INC
32 patentsUS7795623B2Sep 14, 2010
Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
CREE INC92 citations99
US7446345B2Nov 4, 2008
Light emitting devices with active layers that extend into opened pits
CREE INC148 citations99
US6955977B2Oct 18, 2005
Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures
CREE INC84 citations99
US6906352B2Jun 14, 2005
Group III nitride LED with undoped cladding layer and multiple quantum well
CREE INC168 citations99
US6812053B1Nov 2, 2004
Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
CREE INC104 citations99
US6582986B2Jun 24, 2003
Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures
CREE INC164 citations99
US7692182B2Apr 6, 2010
Group III nitride based quantum well light emitting device structures with an indium containing capping structure
CREE INC91 citations98
US7611917B2Nov 3, 2009
Methods of forming light emitting devices with active layers that extend into opened pits
CREE INC73 citations98
US7312474B2Dec 25, 2007
Group III nitride based superlattice structures
CREE INC153 citations98
US6958497B2Oct 25, 2005
Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
CREE INC290 citations98
US6664560B2Dec 16, 2003
Ultraviolet light emitting diode
CREE INC144 citations98
US7791101B2Sep 7, 2010
Indium gallium nitride-based ohmic contact layers for gallium nitride-based devices
CREE INC50 citations97
US6734033B2May 11, 2004
Ultraviolet light emitting diode
CREE INC75 citations97
US7368368B2May 6, 2008
Multi-chamber MOCVD growth apparatus for high performance/high throughput
CREE INC50 citations96
USD566057SApr 8, 2008
LED chip
CREE INC54 citations96
US7967652B2Jun 28, 2011
Methods for combining light emitting devices in a package and packages including combined light emitting devices
CREE INC52 citations94
US8044384B2Oct 25, 2011
Group III nitride based quantum well light emitting device structures with an indium containing capping structure
CREE INC13 citations93
USD602450SOct 20, 2009
LED chip
CREE INC19 citations92
US7557380B2Jul 7, 2009
Light emitting devices having a reflective bond pad and methods of fabricating light emitting devices having reflective bond pads
CREE INC15 citations92
USD593968SJun 9, 2009
LED chip
CREE INC36 citations92
USD582866SDec 16, 2008
LED chip
CREE INC37 citations92
USD566056SApr 8, 2008
LED chip
CREE INC41 citations92
US6764932B2Jul 20, 2004
Single step pendeo- and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures
CREE INC20 citations92
US7160747B2Jan 9, 2007
Methods of forming semiconductor devices having self aligned semiconductor mesas and contact layers
CREE INC14 citations91
US7645342B2Jan 12, 2010
Restricted radiated heating assembly for high temperature processing
CREE INC21 citations87
USD621802SAug 17, 2010
Light emitting diode
CREE INC8 citations84
USD595673SJul 7, 2009
Light emitting diode
CREE INC9 citations84
USD583338SDec 23, 2008
LED chip
CREE INC10 citations84
US8853712B2Oct 7, 2014
High efficacy semiconductor light emitting devices employing remote phosphor configurations
CREE INC6 citations83
US6803602B2Oct 12, 2004
Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
CREE INC11 citations82
US7613219B2Nov 3, 2009
Semiconductor devices having self aligned semiconductor mesas and contact layers
CREE INC4 citations72
US7329569B2Feb 12, 2008
Methods of forming semiconductor devices including mesa structures and multiple passivation layers
CREE INC4 citations72
EMERSON DAVID TODD
5 patentsUS8163577B2Apr 24, 2012
Methods of forming light emitting devices having current reducing structures
EMERSON DAVID TODD8 citations84
US8227268B2Jul 24, 2012
Methods of fabricating group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
EMERSON DAVID TODD7 citations83
US8333631B2Dec 18, 2012
Methods for combining light emitting devices in a package and packages including combined light emitting devices
EMERSON DAVID TODD12 citations80
US9112083B2Aug 18, 2015
Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
EMERSON DAVID TODD3 citations73
USRE43725EOct 9, 2012
Ultraviolet light emitting diode
EMERSON DAVID TODD5 citations73
DONOFRIO MATTHEW
3 patentsCHAN CHI KEUNG
3 patentsBERGMANN MICHAEL JOHN
2 patentsCREE HUIZHOU OPTO LTD
1 patentCHITNIS ASHAY
1 patentCHAN ALEX CHI KEUNG
1 patentHUSSELL CHRISTOPHER P
1 patentIBBETSON JAMES
1 patentShowing the top 50 of 77 patents by PatentIndex Score.