Inventor
LIN YOU-RU
TW31 patents
⚠️ This page may combine multiple inventors who share the name “LIN YOU-RU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
26 patentsUS10797162B2Oct 6, 2020
FinFET device having a channel defined in a diamond-like shape semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10084069B2Sep 25, 2018
Apparatus and method for FinFETs
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9773889B2Sep 26, 2017
Method of semiconductor arrangement formation
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9502539B2Nov 22, 2016
FINFET device having a channel defined in a diamond-like shape semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10263097B2Apr 16, 2019
Method of semiconductor arrangement formation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9583598B2Feb 28, 2017
FETs and methods of forming FETs
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9559099B2Jan 31, 2017
Apparatus and method for FinFETs
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11856862B2Dec 26, 2023
Fatigue-free bipolar loop treatment to reduce imprint effect in piezoelectric device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11456330B2Sep 27, 2022
Fatigue-free bipolar loop treatment to reduce imprint effect in piezoelectric device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12477765B2Nov 18, 2025
FinFET device having a channel defined in a diamond-like shape semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11502186B2Nov 15, 2022
FinFET device having a channel defined in a diamond-like shape semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12232424B2Feb 18, 2025
Fatigue-free bipolar loop treatment to reduce imprint effect in piezoelectric device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12082505B2Sep 3, 2024
Integrated heater (and related method) to recover degraded piezoelectric device performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11984261B2May 14, 2024
Integration scheme for breakdown voltage enhancement of a piezoelectric metal-insulator-metal device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11730058B2Aug 15, 2023
Integrated heater (and related method) to recover degraded piezoelectric device performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11177368B2Nov 16, 2021
Semiconductor arrangement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11107630B2Aug 31, 2021
Integration scheme for breakdown voltage enhancement of a piezoelectric metal-insulator-metal device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10957607B2Mar 23, 2021
Semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11289568B2Mar 29, 2022
Reduction of electric field enhanced moisture penetration by metal shielding
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10522418B2Dec 31, 2019
Semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10164062B2Dec 25, 2018
FinFET device having a channel defined in a diamond-like shape semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10134638B2Nov 20, 2018
FETS and methods of forming FETS
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9922828B2Mar 20, 2018
Apparatus and method for FinFETs
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9722051B2Aug 1, 2017
Apparatus and method for FinFETs
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9450098B2Sep 20, 2016
FinFET having superlattice stressor
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US12400926B2Aug 26, 2025
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50