Inventor

KO CHIH-HSIN

TW198 patents

⚠️ This page may combine multiple inventors who share the name “KO CHIH-HSIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KO CHIH-HSIN

TAIWAN SEMICONDUCTOR MFG

Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit

Strained channel complementary field-effect transistors

Method of forming a shallow trench isolation structure

Transistor mobility improvement by adjusting stress in shallow trench isolation

Strained-channel transistor and methods of manufacture

Strained channel complementary field-effect transistors and methods of manufacture

Strained channel transistor and methods of manufacture

FinFET low resistivity contact formation method

FinFETs with strained well regions

Method for fabricating a strained structure

CMOS FinFET device

Isolation spacer for thin SOI devices

Diffusion topography engineering for high performance CMOS fabrication

Isolation structure with nitrogen-containing liner and methods of manufacture

High performance semiconductor devices fabricated with strain-induced processes and methods for making same

Heterostructure resistor and method of forming the same

BiCMOS performance enhancement by mechanical uniaxial strain and methods of manufacture

Recessed polysilicon gate structure for a strained silicon MOSFET device

TAIWAN SEMICONDUCTOR MFG CO LTD

FinFETs with strained well regions

FinFETs with strained well regions

Multiple gate field-effect transistors having oxygen-scavenged gate stack

FinFET devices with unique fin shape and the fabrication thereof

Wrap-around contact

Method for fabricating a strained structure and structure formed

Method of metal gate formation and structures formed by the same

FinFET device having a channel defined in a diamond-like shape semiconductor structure

Wrap-around contact on FinFET

Wrap-around contact on FinFET

Method of forming strained structures of semiconductor devices

Apparatus and method for FinFETs

Source/drain profile for FinFET

Wrap-around contact on FinFET

Methods for forming semiconductor regions in trenches

Method of semiconductor arrangement formation

WU CHENG-HSIEN

Semiconductor structures and methods with high mobility and high energy bandgap materials

Contact structure of semiconductor device

FinFET design and method of fabricating same

Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces

Method of forming CMOS FinFET device

Semiconductor device with enhanced strain

KO CHIH-HSIN

High-mobility multiple-gate transistor with improved on-to-off current ratio

Fin structure for high mobility multiple-gate transistor

Gradient ternary or quaternary multiple-gate transistor

TSAI JI-YIN

In-situ doping of arsenic for source and drain epitaxy

Semiconductor devices and methods of manufacture thereof

WANN CLEMENT HSINGJEN

Re-growing source/drain regions from un-relaxed silicon layer

LEE TSUNG-LIN

Method for fabricating a strained structure

LEE YI-JING

Apparatus and method for FinFETs

LIN YOU-RU

FinFET device having a channel defined in a diamond-like shape semiconductor structure

WAN CHENG-TIEN

Method for epitaxial re-growth of semiconductor region