Inventor
PAKALA MAHENDRA
US74 patents
⚠️ This page may combine multiple inventors who share the name “PAKALA MAHENDRA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
14 patentsUS10497858B1Dec 3, 2019
Methods for forming structures for MRAM applications
APPLIED MATERIALS INC23 citations93
US10566188B2Feb 18, 2020
Method to improve film stability
APPLIED MATERIALS INC16 citations85
US10636964B2Apr 28, 2020
Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy
APPLIED MATERIALS INC5 citations84
US10468592B1Nov 5, 2019
Magnetic tunnel junctions and methods of fabrication thereof
APPLIED MATERIALS INC7 citations84
US10255935B2Apr 9, 2019
Magnetic tunnel junctions suitable for high temperature thermal processing
APPLIED MATERIALS INC7 citations84
US9564582B2Feb 7, 2017
Method of forming magnetic tunneling junctions
APPLIED MATERIALS INC15 citations82
US11251364B2Feb 15, 2022
Magnetic tunnel junctions suitable for high temperature thermal processing
APPLIED MATERIALS INC2 citations73
US11133460B2Sep 28, 2021
Methods for forming structures with desired crystallinity for MRAM applications
APPLIED MATERIALS INC2 citations73
US10622011B2Apr 14, 2020
Magnetic tunnel junctions suitable for high temperature thermal processing
APPLIED MATERIALS INC3 citations73
US11374170B2Jun 28, 2022
Methods to form top contact to a magnetic tunnel junction
APPLIED MATERIALS INC2 citations72
US10756259B2Aug 25, 2020
Spin orbit torque MRAM and manufacture thereof
APPLIED MATERIALS INC3 citations72
US10727232B2Jul 28, 2020
Dram and method of making
APPLIED MATERIALS INC2 citations67
US12408557B2Sep 2, 2025
Methods for forming structures with desired crystallinity for MRAM applications
APPLIED MATERIALS INC0 citations62
US12402535B2Aug 26, 2025
Magnetic tunnel junctions with tunable high perpendicular magnetic anisotropy
APPLIED MATERIALS INC0 citations62
WESTERN DIGITAL FREMONT LLC
10 patentsUS8638529B1Jan 28, 2014
Method and system for providing a magnetic read transducer having a bilayer magnetic seed layer
WESTERN DIGITAL FREMONT LLC153 citations99
US8381391B2Feb 26, 2013
Method for providing a magnetic recording transducer
WESTERN DIGITAL FREMONT LLC148 citations99
US8603593B1Dec 10, 2013
Method for providing an improved hard bias structure
WESTERN DIGITAL FREMONT LLC153 citations98
US8343319B1Jan 1, 2013
Method and system for providing an improved hard bias structure
WESTERN DIGITAL FREMONT LLC150 citations97
US9396742B1Jul 19, 2016
Magnetoresistive sensor for a magnetic storage system read head, and fabrication method thereof
WESTERN DIGITAL FREMONT LLC12 citations84
US9064507B1Jun 23, 2015
Magnetic etch-stop layer for magnetoresistive read heads
WESTERN DIGITAL FREMONT LLC5 citations84
US9321146B1Apr 26, 2016
Systems and methods for shaping leads of electronic lapping guides to reduce calibration error
WESTERN DIGITAL FREMONT LLC8 citations82
US9214168B1Dec 15, 2015
Method and system for providing a magnetic transducer having improved shield-to-shield spacing
WESTERN DIGITAL FREMONT LLC4 citations73
US9030784B2May 12, 2015
Magnetic head having a magnetoresistive junction and side oxide layers
WESTERN DIGITAL FREMONT LLC4 citations73
US9053719B2Jun 9, 2015
Magnetoresistive sensor for a magnetic storage system read head, and fabrication method thereof
WESTERN DIGITAL FREMONT LLC3 citations63
GRANDIS INC
8 patentsUS7489541B2Feb 10, 2009
Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements
GRANDIS INC157 citations99
US7369427B2May 6, 2008
Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
GRANDIS INC201 citations99
US7282755B2Oct 16, 2007
Stress assisted current driven switching for magnetic memory applications
GRANDIS INC180 citations99
US7241631B2Jul 10, 2007
MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements
GRANDIS INC189 citations99
US7126202B2Oct 24, 2006
Spin scattering and heat assisted switching of a magnetic element
GRANDIS INC163 citations99
US7110287B2Sep 19, 2006
Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer
GRANDIS INC193 citations99
US7098494B2Aug 29, 2006
Re-configurable logic elements using heat assisted magnetic tunneling elements
GRANDIS INC186 citations99
US7289356B2Oct 30, 2007
Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein
GRANDIS INC193 citations98
LENG QUNWEN
4 patentsUS8545999B1Oct 1, 2013
Method and system for providing a magnetoresistive structure
LENG QUNWEN167 citations99
US8498084B1Jul 30, 2013
Magnetoresistive sensors having an improved free layer
LENG QUNWEN159 citations99
US8194365B1Jun 5, 2012
Method and system for providing a read sensor having a low magnetostriction free layer
LENG QUNWEN167 citations99
US8422176B1Apr 16, 2013
Method and system for providing a magnetic read transducer having a bilayer magnetic seed layer
LENG QUNWEN158 citations98
ZHENG YUANKAI
2 patentsPAKALA MAHENDRA
2 patentsPARK CHANDO
2 patentsKAISER CHRISTIAN
2 patentsLI GUANXIONG
1 patentROY ANUP G
1 patentMAO MING
1 patentREAD RITE CORP
1 patentROY ANUP GHOSH
1 patentSONY CORP
1 patentShowing the top 50 of 74 patents by PatentIndex Score.