Inventor
HULL JEFFERY B
US16 patents
⚠️ This page may combine multiple inventors who share the name “HULL JEFFERY B”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
15 patentsUS11688808B2Jun 27, 2023
Transistor and methods of forming integrated circuitry
MICRON TECHNOLOGY INC2 citations72
US11024736B2Jun 1, 2021
Transistor and methods of forming integrated circuitry
MICRON TECHNOLOGY INC2 citations72
US11264395B1Mar 1, 2022
Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry
MICRON TECHNOLOGY INC2 citations71
US10483407B2Nov 19, 2019
Methods of forming si3nX, methods of forming insulator material between a control gate and charge-storage material of a programmable charge-storage transistor, and methods of forming an array of elevationally-extending strings of memory cells and a programmable charge-storage transistor manufactured in accordance with methods
MICRON TECHNOLOGY INC2 citations69
US12113130B2Oct 8, 2024
Transistor and methods of forming integrated circuitry
MICRON TECHNOLOGY INC0 citations62
US11637175B2Apr 25, 2023
Vertical transistors
MICRON TECHNOLOGY INC0 citations62
US12191354B2Jan 7, 2025
Vertical transistors having at least 50% grain boundaries offset between top and bottom source/drain regions and the channel region that is vertically therebetween
MICRON TECHNOLOGY INC0 citations61
US11417730B2Aug 16, 2022
Vertical transistors with channel region having vertically elongated crystal grains that individually are directly against both of the top and bottom source/drain regions
MICRON TECHNOLOGY INC0 citations61
US11387369B2Jul 12, 2022
Semiconductor structure formation
MICRON TECHNOLOGY INC0 citations61
US12432928B2Sep 30, 2025
Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry
MICRON TECHNOLOGY INC0 citations60
US12057493B2Aug 6, 2024
Integrated circuitry, method used in the fabrication of a vertical transistor, and method used in the fabrication of integrated circuitry
MICRON TECHNOLOGY INC0 citations60
US11871582B2Jan 9, 2024
Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry
MICRON TECHNOLOGY INC0 citations60
US11777011B2Oct 3, 2023
Integrated circuitry, method used in the fabrication of a vertical transistor, and method used in the fabrication of integrated circuitry
MICRON TECHNOLOGY INC0 citations60
US9105666B2Aug 11, 2015
Methods of fabricating semiconductor structures
MICRON TECHNOLOGY INC0 citations51
US10749041B2Aug 18, 2020
Programmable charge storage transistor, an array of elevationally-extending strings of memory cells, methods of forming Si3Nx, methods of forming insulator material that is between a control gate and charge-storage material of a programmable charge-storage transistor, methods of forming an array of elevationally-extending strings of memory cells, a programmable charge-storage transistor manufactured in accordance with methods, and an array of elevationally-extending strings of memory cells man
MICRON TECHNOLOGY INC0 citations48