Inventor

KHANDEKAR ANISH A

US41 patents

⚠️ This page may combine multiple inventors who share the name “KHANDEKAR ANISH A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KHANDEKAR ANISH A

MICRON TECHNOLOGY INC

Methods of forming an array of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stack

Methods used in forming an array of elevationally-extending strings of memory cells, methods of forming an array of elevationally-extending strings of memory cells, and methods of forming an array of vertical strings of memory cells

Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials

Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials

Transistors and arrays of elevationally-extending strings of memory cells

Method of forming an array of elevationally-extending strings of programmable memory cells and method of forming an array of elevationally-extending strings of memory cells

Methods of forming a channel region of a transistor and methods used in forming a memory array

Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon

Integrated structures

Transistor and methods of forming integrated circuitry

Transistor and methods of forming integrated circuitry

Integrated structures and methods of forming vertically-stacked memory cells

Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry

Transistors and arrays of elevationally-extending strings of memory cells

Transistor and methods of forming integrated circuitry

Vertical transistors

Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon

Arrays of elevationally-extending strings of memory cells and methods used in forming an array of elevationally-extending strings of memory cells

Semiconductor contact formation

Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon

Arrays of elevationally-extending strings of memory cells and methods used in forming an array of elevationally-extending strings of memory cells

Methods of forming a channel region of a transistor and methods used in forming a memory array

Integrated assemblies having rugged material fill, and methods of forming integrated assemblies

Semiconductor structure formation

Semiconductor structure formation

Semiconductor structure formation

Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry

Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitry

On-die formation of single-crystal semiconductor structures

On-die formation of single-crystal semiconductor structures

Semiconductor formation using hybrid oxidation

Arrays of elevationally-extending strings of memory cells and methods used in forming an array of elevationally-extending strings of memory cells

Methods of forming an array of elevationally-extending strings of memory cells, methods of forming polysilicon, elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor, and electronic components comprising polysilicon

Integrated structures and methods of forming vertically-stacked memory cells

Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials

Arrays of elevationally-extending strings of memory cells having a stack comprising vertically-alternating insulative tiers and wordline tiers and horizontally-elongated trenches in the stacks

Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materials

LIU LEQUN

Methods of forming semiconductor devices having diffusion regions of reduced width

Semiconductor devices and methods of forming semiconductor devices having diffusion regions of reduced width