Inventor
GAO YUNFEI
US22 patents
⚠️ This page may combine multiple inventors who share the name “GAO YUNFEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
15 patentsUS11600535B2Mar 7, 2023
Integrated assemblies having conductive material along three of four sides around active regions, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC4 citations74
US11538809B2Dec 27, 2022
Metal insulator semiconductor (MIS) contact in three dimensional (3D) vertical memory
MICRON TECHNOLOGY INC3 citations73
US11348932B2May 31, 2022
Integrated assemblies having transistor body regions coupled to carrier-sink-structures; and methods of forming integrated assemblies
MICRON TECHNOLOGY INC1 citations73
US11069687B2Jul 20, 2021
Integrated assemblies having shield lines between digit lines, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC3 citations72
US12219758B2Feb 4, 2025
Integrated assemblies having transistor body regions coupled to carrier-sink-structures; and methods of forming integrated assemblies
MICRON TECHNOLOGY INC0 citations62
US11910597B2Feb 20, 2024
Integrated assemblies having transistor body regions coupled to carrier-sink-structures; and methods of forming integrated assemblies
MICRON TECHNOLOGY INC0 citations62
US11581317B2Feb 14, 2023
Integrated assemblies having shield lines between digit lines, and methods of forming integrated assemblies
MICRON TECHNOLOGY INC0 citations62
US11527620B2Dec 13, 2022
Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material
MICRON TECHNOLOGY INC0 citations62
US11393928B2Jul 19, 2022
Access devices formed with conductive contacts
MICRON TECHNOLOGY INC0 citations62
US11257962B2Feb 22, 2022
Transistors comprising an electrolyte, semiconductor devices, electronic systems, and related methods
MICRON TECHNOLOGY INC1 citations62
US11038027B2Jun 15, 2021
Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material
MICRON TECHNOLOGY INC0 citations62
US10797135B2Oct 6, 2020
Asymmetric source/drain regions of transistors
MICRON TECHNOLOGY INC0 citations52
US10756217B2Aug 25, 2020
Access devices formed with conductive contacts
MICRON TECHNOLOGY INC0 citations52
US11908932B2Feb 20, 2024
Apparatuses comprising vertical transistors having gate electrodes at least partially recessed within channel regions, and related methods and systems
MICRON TECHNOLOGY INC0 citations48
US10825816B2Nov 3, 2020
Recessed access devices and DRAM constructions
MICRON TECHNOLOGY INC0 citations42
SHENZHEN GOODIX TECH CO LTD
4 patentsUS12148774B2Nov 19, 2024
Trench-gate source follower for low-noise scaled pixel
SHENZHEN GOODIX TECH CO LTD0 citations51
US12142620B2Nov 12, 2024
Complementary metal-oxide semiconductor (CMOS) image sensors with saddle-gate source follower for imaging pixels
SHENZHEN GOODIX TECH CO LTD0 citations51
US11830897B2Nov 28, 2023
Square-gate source-follower for CMOS image sensor pixel
SHENZHEN GOODIX TECH CO LTD0 citations51
US11610923B2Mar 21, 2023
Ferroelectric-oxide hybrid-gate transistor block for semiconductor imaging sensors
SHENZHEN GOODIX TECH CO LTD0 citations51
UNIV NORTH CAROLINA STATE
2 patentsUS11813592B2Nov 14, 2023
Oxygen carrying materials with surface modification for redox-based catalysis and methods of making and uses thereof
UNIV NORTH CAROLINA STATE3 citations63
US10946365B2Mar 16, 2021
Materials and methods for oxidative dehydrogenation of alkyl aromatic compounds involving lattice oxygen of transition metal oxides
UNIV NORTH CAROLINA STATE1 citations61