P

Inventor

GAO YUNFEI

US22 patents
⚠️ This page may combine multiple inventors who share the name “GAO YUNFEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

15 patents
US11600535B2Mar 7, 2023

Integrated assemblies having conductive material along three of four sides around active regions, and methods of forming integrated assemblies

MICRON TECHNOLOGY INC4 citations74
US11538809B2Dec 27, 2022

Metal insulator semiconductor (MIS) contact in three dimensional (3D) vertical memory

MICRON TECHNOLOGY INC3 citations73
US11348932B2May 31, 2022

Integrated assemblies having transistor body regions coupled to carrier-sink-structures; and methods of forming integrated assemblies

MICRON TECHNOLOGY INC1 citations73
US11069687B2Jul 20, 2021

Integrated assemblies having shield lines between digit lines, and methods of forming integrated assemblies

MICRON TECHNOLOGY INC3 citations72
US12219758B2Feb 4, 2025

Integrated assemblies having transistor body regions coupled to carrier-sink-structures; and methods of forming integrated assemblies

MICRON TECHNOLOGY INC0 citations62
US11910597B2Feb 20, 2024

Integrated assemblies having transistor body regions coupled to carrier-sink-structures; and methods of forming integrated assemblies

MICRON TECHNOLOGY INC0 citations62
US11581317B2Feb 14, 2023

Integrated assemblies having shield lines between digit lines, and methods of forming integrated assemblies

MICRON TECHNOLOGY INC0 citations62
US11527620B2Dec 13, 2022

Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material

MICRON TECHNOLOGY INC0 citations62
US11393928B2Jul 19, 2022

Access devices formed with conductive contacts

MICRON TECHNOLOGY INC0 citations62
US11257962B2Feb 22, 2022

Transistors comprising an electrolyte, semiconductor devices, electronic systems, and related methods

MICRON TECHNOLOGY INC1 citations62
US11038027B2Jun 15, 2021

Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material

MICRON TECHNOLOGY INC0 citations62
US10797135B2Oct 6, 2020

Asymmetric source/drain regions of transistors

MICRON TECHNOLOGY INC0 citations52
US10756217B2Aug 25, 2020

Access devices formed with conductive contacts

MICRON TECHNOLOGY INC0 citations52
US11908932B2Feb 20, 2024

Apparatuses comprising vertical transistors having gate electrodes at least partially recessed within channel regions, and related methods and systems

MICRON TECHNOLOGY INC0 citations48
US10825816B2Nov 3, 2020

Recessed access devices and DRAM constructions

MICRON TECHNOLOGY INC0 citations42

SHENZHEN GOODIX TECH CO LTD

4 patents

UNIV NORTH CAROLINA STATE

2 patents

GAO YUNFEI

1 patent