Inventor
PARK HYUNKOOK
KR11 patents
⚠️ This page may combine multiple inventors who share the name “PARK HYUNKOOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
7 patentsUS9685237B2Jun 20, 2017
Driver circuit charging charge node
SAMSUNG ELECTRONICS CO LTD7 citations81
US12124702B2Oct 22, 2024
Semiconductor memory device capable of controlling a floating state of adjacent word lines and an operating method thereof
SAMSUNG ELECTRONICS CO LTD2 citations70
US12525297B2Jan 13, 2026
Nonvolatile memory device and memory package including the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US12176036B2Dec 24, 2024
Memory device for controlling word line voltage and operating method thereof
SAMSUNG ELECTRONICS CO LTD0 citations49
US11908533B2Feb 20, 2024
Memory device detecting leakage current and operation method thereof
SAMSUNG ELECTRONICS CO LTD0 citations49
US12573457B2Mar 10, 2026
Non-volatile memory device and operating method thereof including a negative discharge voltage
SAMSUNG ELECTRONICS CO LTD0 citations48
US12548622B2Feb 10, 2026
Non-volatile memory devices including twisted block select lines
SAMSUNG ELECTRONICS CO LTD0 citations48
JUNG SEONG-OOK
3 patentsUS8447547B2May 21, 2013
Static noise margin estimation
JUNG SEONG-OOK11 citations83
US9875788B2Jan 23, 2018
Low-power 5T SRAM with improved stability and reduced bitcell size
JUNG SEONG-OOK8 citations81
US9865330B2Jan 9, 2018
Stable SRAM bitcell design utilizing independent gate FinFET
JUNG SEONG-OOK0 citations39