Inventor
CHOI MOORYM
KR16 patents
Patents
16 patentsUS10790358B2Sep 29, 2020
Three-dimensional semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD4 citations71
US10403719B2Sep 3, 2019
Three-dimensional semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD5 citations71
US12144178B2Nov 12, 2024
Three-dimensional semiconductor memory device and method of detecting electrical failure thereof
SAMSUNG ELECTRONICS CO LTD0 citations62
US11088161B2Aug 10, 2021
Three-dimensional semiconductor memory device and method of detecting electrical failure thereof
SAMSUNG ELECTRONICS CO LTD0 citations62
US12262534B2Mar 25, 2025
Semiconductor devices and electronic systems including the same
SAMSUNG ELECTRONICS CO LTD0 citations59
US12374642B2Jul 29, 2025
Semiconductor devices and data storage systems including the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US12051664B2Jul 30, 2024
Semiconductor device and data storage system including a landing pad on an external side region of a bypass via
SAMSUNG ELECTRONICS CO LTD0 citations50
US12388017B2Aug 12, 2025
Semiconductor devices including a source contact plug and a source connection pattern, and data storage systems including the same
SAMSUNG ELECTRONICS CO LTD0 citations48
US12362302B2Jul 15, 2025
Semiconductor devices and data storage systems including the same
SAMSUNG ELECTRONICS CO LTD0 citations48
US12575106B2Mar 10, 2026
Three-dimensional semiconductor memory device, electronic system including the same
SAMSUNG ELECTRONICS CO LTD0 citations47
US12133381B2Oct 29, 2024
Semiconductor devices and data storage systems including the same
SAMSUNG ELECTRONICS CO LTD0 citations47
US12074128B2Aug 27, 2024
Three-dimensional semiconductor memory device and electronic system including the same
SAMSUNG ELECTRONICS CO LTD0 citations47
US11930638B2Mar 12, 2024
Nonvolatile memory device and memory system comprising the same
SAMSUNG ELECTRONICS CO LTD0 citations46
US12302578B2May 13, 2025
Non-volatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations45
US11887951B2Jan 30, 2024
Three-dimensional semiconductor memory device and electronic system including the same
SAMSUNG ELECTRONICS CO LTD0 citations45
US12278201B2Apr 15, 2025
Non-volatile memory device with a conductive etch stop layer, method of manufacturing the same, and memory system including the same
SAMSUNG ELECTRONICS CO LTD0 citations44