Inventor
HUO ZONG-LIANG
KR10 patents
⚠️ This page may combine multiple inventors who share the name “HUO ZONG-LIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
7 patentsUS7368788B2May 6, 2008
SRAM cells having inverters and access transistors therein with vertical fin-shaped active regions
SAMSUNG ELECTRONICS CO LTD33 citations91
US7338862B2Mar 4, 2008
Methods of fabricating a single transistor floating body DRAM cell having recess channel transistor structure
SAMSUNG ELECTRONICS CO LTD40 citations91
US7982256B2Jul 19, 2011
Semiconductor memory device having DRAM cell mode and non-volatile memory cell mode and operation method thereof
SAMSUNG ELECTRONICS CO LTD14 citations83
US7384841B2Jun 10, 2008
DRAM device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations72
US7795659B2Sep 14, 2010
DRAM device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations61
US7274066B2Sep 25, 2007
Semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations41
US7994003B2Aug 9, 2011
Nonvolatile memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations38
HUO ZONG-LIANG
3 patentsUS8084316B2Dec 27, 2011
Method of fabricating single transistor floating-body DRAM devices having vertical channel transistor structures
HUO ZONG-LIANG18 citations90
US8269268B2Sep 18, 2012
Charge trap flash memory device and memory card and system including the same
HUO ZONG-LIANG7 citations82
US8405137B2Mar 26, 2013
Single transistor floating-body DRAM devices having vertical channel transistor structures
HUO ZONG-LIANG3 citations60